Power switch
A power switch includes first and second MOS transistors in series between first and second nodes. Both the first and second transistors have a gate coupled to its substrate. First and second resistive elements are coupled between the gate of the first transistor and the first node, and between the gate of the second transistor and the second node, respectively. A triac is coupled between the first and second nodes. The gate of the triac is coupled to a third node common to the first and second transistors. A third MOS transistor has a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor.
1. A power switch comprising:
a first MOS transistor having a gate coupled to a body region;
a second MOS transistor having a gate coupled to a body region, the first and second MOS transistors being coupled in series between a first node and a second node;
a first resistive element coupled between the gate of the first transistor and the first node;
a second resistive element coupled between the gate of the second transistor and the second node;
a triac coupled between the first node and the second node, a gate of the triac being coupled to a third node that is common to the first and second transistors; and
a third MOS transistor having a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor.
2. The switch of claim 1 , wherein the first transistor has a first conduction electrode coupled to the first node and a second conduction electrode coupled to the third node and wherein the second transistor has a first conduction electrode coupled to the third node and a second conduction electrode coupled to the second node.
3. The switch of claim 2 , wherein the gate and the body region of the first transistor are not directly connected to either the first or second conduction electrode of the first transistor, and wherein the gate and the body region of the second transistor are not directly connected to either the first or second conduction electrode of the second transistor.
4. The switch of claim 1 , wherein the first, second and third transistors are N-channel MOS transistors.
5. The switch of claim 1 , further comprising a first control terminal coupled to a gate of the third transistor.
6. The switch of claim 5 , further comprising a second control terminal coupled to a body region of the third transistor.
7. The switch of claim 1 , further comprising:
a first controlled diode having an anode coupled to the first node and a cathode coupled to the third node, wherein a control gate of the first diode is coupled to the gate of the first transistor; and
a second controlled diode having an anode coupled to the second node and a cathode couple to the third node, wherein a control gate of the second diode is coupled to the gate of the second transistor.
8. The switch of claim 1 , wherein the third transistor is controlled by application of a control signal referenced with respect to a fourth node that is distinct from the first, second, and third nodes.
9. The switch of claim 1 , wherein the switch is configured to control a load powered with a D.C. voltage.
10. The switch of claim 1 , wherein the switch is configured to control a load powered with an A.C. voltage.
11. The switch of claim 1 , wherein the switch is configured to switch electric power supply sources.
12. The switch of claim 1 , wherein the switch integrated onto a chip that includes circuitry formed in CMOS technology.
13. A method of operating a switch, the method comprising:
providing a switch, the switch comprising:
a first MOS transistor having a gate coupled to a body region
a second MOS transistor having a gate coupled to a body region, the first and second MOS transistors being coupled in series between a first node and a second node;
a first resistive element coupled between the gate of the first transistor and the first node;
a second resistive element coupled between the gate of the second transistor and the second node;
a triac coupled between the first node and the second node, a gate of the triac being coupled to a third node that is common to the first and second transistors; and
a third MOS transistor having a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor, the third transistor further comprising a gate and a body region; and
applying a control signal to either the gate and/or the body region of the third transistor.
14. The method of claim 13 , wherein applying the control signal comprises applying a first control signal to the gate of the third transistor and applying a second control signal to the body region of the third transistor.
15. The method of claim 13 , wherein applying the control signal comprises applying the control signal to the gate of the third transistor.
16. The method of claim 13 , wherein applying the control signal comprises applying the control signal to the body region of the third transistor.
17. The method of claim 13 , wherein the first and second nodes are coupled across a D.C. voltage load.
18. The method of claim 13 , wherein the first and second nodes are coupled across an A.C. voltage load.
19. The method of claim 13 , wherein the control signal is referenced with respect to a fourth node that is distinct from the first, second, and third nodes.
20. The method of claim 13 , wherein the switch further comprises:
a first controlled diode having an anode coupled to the first node and a cathode coupled to the third node, wherein a control gate of the first diode is coupled to the gate of the first transistor; and
a second controlled diode having an anode coupled to the second node and a cathode couple to the third node, wherein a control gate of the second diode is coupled to the gate of the second transistor.