System and method for tuning a supply voltage for data retention
A processor and a system are provided for tuning a supply voltage for data retention. The contents of data storage circuitry are read and a data verification indication corresponding to the contents is computed. Then, the supply voltage provided to the data storage circuitry is reduced to a low voltage level that is intended to retain the contents of the data storage circuitry.
1. A method comprising:
reading, by a data retention circuit, contents of a data storage circuit;
computing, by the data retention circuit, a data verification indication corresponding to the contents;
reducing, by the data retention circuit, a supply voltage provided to the data storage circuit to a low voltage level intended to retain the contents of the data storage circuit; and
increasing, by the data retention circuit, the low voltage level after determining, based on the data verification indication, that the contents of the data storage circuit were not retained.
2. The method of claim 1 , further comprising:
increasing, by the data retention circuit, the supply voltage provided to the data storage circuit to a normal operating voltage level; and
verifying, by the data retention circuit, the contents of the data storage circuit using the data verification indication.
3. The method of claim 1 , further comprising restoring the contents of the data storage circuit after determining, based on the data verification indication, that the contents of the data storage circuit were not retained.
4. The method of claim 3 , wherein the restoring of the contents of the data storage circuit is accomplished based on the data verification indication and current contents of the data storage circuit that are different compared with the contents of the data storage circuit prior to the reducing of the supply voltage to the low voltage level.
5. The method of claim 2 , further comprising decreasing, by the data retention circuit, the low voltage level after determining that the contents of the data storage circuit were retained.
6. The method of claim 1 , wherein the data verification indication is computed using a linear feedback shift register.
7. The method of claim 1 , further comprising storing the data verification indication in built-in self-test registers associated with the data storage circuit.
8. The method of claim 1 , wherein a size of the data verification indication, in bits, is smaller than a size of the contents of the data storage circuit.
9. The method of claim 1 , further comprising storing the data verification indication in registers within an integrated circuit that also contains the data storage circuit.
10. The method of claim 1 , wherein the data storage circuit is a static random access memory (SRAM).
11. The method of claim 1 , further comprising adjusting the low voltage based on an environmental factor.
12. An integrated circuit comprising:
a data storage circuit; and
a data retention unit coupled to the data storage circuitand configured to:
read contents of the data storage circuit;
compute a data verification indication corresponding to the contents;
reduce a supply voltage provided to the data storage circuitto a low voltage level intended to retain the contents of the data storage circuitry; and
increase the low voltage level after determining, based on the data verification indication, that the contents of the data storage circuitry were not retained.
13. The integrated circuit of claim 12 , wherein the data retention unit is further configured to:
increase the supply voltage provided to the data storage circuit to a normal operating voltage level; and
verify the contents of the data storage circuit using the data verification indication.
14. The integrated circuit of claim 12 , further comprising registers configured to store the data verification indication.
15. The integrated circuit of claim 12 , wherein a size of the data verification indication, in bits, is smaller than a size of the contents.
16. The integrated circuit of claim 12 , wherein the data retention unit is further configured to decrease the low voltage level after determining that the contents of the data storage circuit were retained.
17. The integrated circuit of claim 12 , wherein the data retention unit is further configured to restore the contents of the data storage circuit after determining, based on the data verification indication, that the contents of the data storage circuit were not retained.
18. The integrated circuit of claim 12 , wherein the data retention unit comprises a linear feedback shift register that is configured to compute the data verification indication.
19. The integrated circuit of claim 12 , further comprising built-in self-test registers configured to store the data verification indication.
20. The integrated circuit of claim 12 , wherein the data retention unit is further configured to adjust the low voltage based on an environmental factor.