Metal-based solution treatment of CIGS absorber layer in thin-film solar cells
A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.
1. A method for manufacturing a thin film solar cell device comprising the steps of:
(a) forming a back contact layer on a substrate;
(b) forming a CIGS absorber layer on the back contact layer, the CIGS absorber layer having a surface;
(c) treating the surface of the CIGS absorber layer with a metal-based solution of Cd(OH) 2 , Zn(OH) 2 , or In(OH) 3 , whereby corresponding metal ions are produced during the treatment and the metal ions diffuse into the surface of the CIGS absorber layer and dope the surface of the CIGS layer forming a homo-junction within the CIGS absorber layer; and
(d) forming a buffer layer on the CIGS absorber layer.
2. The method of claim 1 , wherein the metal-based solution has a concentration of 0.001M˜10M.
3. The method of claim 1 , wherein the steps (c) and (d) are carried out in-situ in a common environment.
4. The method of claim 1 , wherein the CIGS absorber layer is treated with the metal-based solution that is at a temperature of 15 to 90° C.
5. The method of claim 1 , wherein the CIGS absorber layer is treated with the metal-based solution that is at a temperature of 40 to 80° C.
6. The method of claim 1 , wherein the CIGS absorber layer is treated with the metal-based solution for a duration of 5 to 30 minutes.
7. A CIGS solar cell fabrication process tool comprising:
a loading station where substrates having CIGS absorber layer formed thereon are loaded;
a CIGS pretreatment tank station where the CIGS absorber layers on the substrate are pretreated with a metal-based solution of Cd(OH) 2 , Zn(OH) 2 , or In(OH) 3 ;
a CBD tank for depositing a buffer layer on the CIGS absorber layers, thereby forming interim solar cell structures; and
one or more water tank stations for washing the interim solar cell structures, wherein the CIGS pretreatment tank station and the CBD tank stations are provided in a common environment thereby allowing the CIGS pretreatment and the buffer layer deposition to be conducted as in-situ processes.
8. The CIGS solar cell fabrication process tool of claim 7 , wherein the metal-based solution is at a temperature of 15 to 90° C.
9. The CIGS solar cell fabrication process tool of claim 7 , wherein the metal-based solution is at a temperature of 40 to 80° C.
10. The CIGS solar cell fabrication process tool of claim 7 , wherein the CIGS absorber layer is treated with the metal-based solution for a duration of 5 to 30 minutes.