Nitride semiconductor light emitting device and method of manufacturing the same

1. A nitride semiconductor light emitting device comprising:

an uneven substrate having an uneven structure in which a recess is formed;

a first nitride semiconductor layer of a first conductive type formed on the uneven structure;

a first light emitting layer formed on the first nitride semiconductor layer; and

a second nitride semiconductor layer of a second conductive type formed on the first light emitting layer, the second conductive type being different from the first conductive type,

wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer,

the uneven substrate includes a first substrate comprising silicon, an insulating layer formed on the first substrate, and a second substrate comprising silicon formed on the insulating layer,

the recess is an opening formed in the second substrate such that the bottom of the recess is part of a surface of the insulating layer, and

the recess has a side surface having a plane direction different from a plane direction of a main surface of the second substrate.

2. The nitride semiconductor light emitting device according to claim 1 , wherein the side surface of the recess is a (111) silicon plane.

3. The nitride semiconductor light emitting device according to claim 1 , wherein the main surface of the second substrate is one of (i) a seven-degree off-oriented plane which is oriented off by seven degrees from a (100) silicon plane, (ii) a (311) silicon plane, (iii) a (110) silicon plane, and (iv) a (112) silicon plane.

4. The nitride semiconductor light emitting device according to claim 1 , wherein the first nitride semiconductor layer has a planar top surface.

5. The nitride semiconductor light emitting device according to claim 1 , wherein the first substrate has a main surface which is a (100) silicon plane.

6. The nitride semiconductor light emitting device according to claim 1 , wherein the uneven substrate has, as the uneven structure, a periodic structure in which recesses and protrusions are arranged at regular intervals.

7. A nitride semiconductor light emitting device comprising:

an uneven substrate having an uneven structure in which a recess is formed;

a first nitride semiconductor layer of a first conductive type formed on the uneven structure;

a first light emitting layer formed on the first nitride semiconductor layer; and

a second nitride semiconductor layer of a second conductive type formed on the first light emitting layer, the second conductive type being different from the first conductive type,

wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer,

the uneven substrate has a first area having the uneven structure and a second area having a planar surface,

a first nitride semiconductor stack is formed on the first area, the first nitride semiconductor stack including the first nitride semiconductor layer, the first light emitting layer, and the second nitride semiconductor layer,

a second nitride semiconductor stack is formed on the second area, the second nitride semiconductor stack including a third nitride semiconductor layer of the first conductive type, a second light emitting layer, and a fourth nitride semiconductor layer of the second conductive type,

the second nitride semiconductor stack has a main surface whose plane direction is different from a plane direction of a main surface of the first nitride semiconductor stack, and

the second light emitting layer emits light having a wavelength longer than a wavelength of light emitted from the first light emitting layer.

8. The nitride semiconductor light emitting device according to claim 7 , wherein the first area and the second area are separated by an insulating layer.

9. The nitride semiconductor light emitting device according to claim 7 , wherein each of the first area and the second area comprises a silicon single crystal.

10. The nitride semiconductor light emitting device according to claim 7 ,

wherein a protrusion in the uneven structure in the first area has at least two side surfaces,

one of the at least two side surfaces of the protrusion is a (100) silicon plane, and

the other side surface of the protrusion is covered with a predetermined mask.

11. The nitride semiconductor light emitting device according to claim 7 , wherein the uneven substrate is a sapphire substrate having a main surface which is a (11-20) plane.

12. The nitride semiconductor light emitting device according to claim 7 , wherein at least one of the second nitride semiconductor layer and the fourth nitride semiconductor layer includes an uneven structure.

13. The nitride semiconductor light emitting device according to claim 7 , further comprising:

a third nitride semiconductor stack formed on the uneven substrate, the third nitride semiconductor stack including a fifth nitride semiconductor layer of the first conductive type, a third light emitting layer, and a sixth nitride semiconductor layer of the second conductive type,

wherein the third light emitting layer emits light having a wavelength different from wavelengths of light emitted from the first light emitting layer and light emitted from the second light emitting layer.

14. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:

forming an uneven substrate having an uneven structure in which a recess is formed;

forming a first nitride semiconductor layer of a first conductive type on the uneven structure;

forming a first light emitting layer on the first nitride semiconductor layer; and

forming a second nitride semiconductor layer of a second conductive type on the light emitting layer, the second conductive type being different from the first conductive type,

wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer,

the forming of an uneven substrate includes:

forming, on a first substrate comprising silicon, (i) an insulating layer part of which is a bottom of the recess and (ii) a second substrate comprising silicon; and

forming the recess having a side surface whose plane direction is different from a plane direction of a main surface of the second substrate, by partly removing the second substrate to expose the insulating layer; and

forming, in the forming of a first nitride semiconductor layer, the first nitride semiconductor layer on the side surface of the recess.

15. The method of manufacturing a nitride semiconductor light emitting device, according to claim 14 , wherein the side surface of the recess is a (111) silicon plane.

16. The method of manufacturing a nitride semiconductor light emitting device, according to claim 14 , the method further comprising:

bonding a third substrate to the second nitride semiconductor layer; and

removing the first substrate, the insulating layer, and the second substrate.

17. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:

forming an uneven substrate having an uneven structure in which a recess is formed;

forming a first nitride semiconductor layer of a first conductive type on the uneven structure;

forming a first light emitting layer on the first nitride semiconductor layer; and

forming a second nitride semiconductor layer of a second conductive type on the light emitting layer, the second conductive type being different from the first conductive type,

wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer,

the forming of an uneven substrate includes:

forming, on a first substrate comprising a silicon single crystal, (i) an insulating layer and (ii) a second substrate comprising a silicon single crystal and having a main surface whose plane direction is different from a plane direction of a (111) silicon plane; and

forming a protrusion having a first side surface which is the (111) silicon plane, by partly removing the second substrate to expose the insulating layer,

the method further comprising:

forming a predetermined mask that covers a second side surface which is other than the first side surface among the side surfaces of the protrusion, the forming being performed between the forming of an uneven substrate and the forming of a first nitride semiconductor layer;

partly removing the insulating layer to expose the first substrate;

forming a third nitride semiconductor layer of the first conductive type on the exposed first substrate;

forming a second light emitting layer on the third nitride semiconductor layer; and

forming a fourth nitride semiconductor layer of the second conductive type on the second light emitting layer.

18. The method of manufacturing a nitride semiconductor light emitting device, according to claim 17 , further comprising:

bonding a third substrate to the second nitride semiconductor layer and the fourth nitride semiconductor layer; and

removing the first substrate, the insulating layer, and the second substrate.

19. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:

forming an uneven substrate having an uneven structure in which a recess is formed;

forming a first nitride semiconductor layer of a first conductive type on the uneven structure;

forming a first light emitting layer on the first nitride semiconductor layer; and

forming a second nitride semiconductor layer of a second conductive type on the light emitting layer, the second conductive type being different from the first conductive type,

wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer,

the forming of an uneven substrate is forming the uneven structure having a side surface which is a (0001) plane, in an area on a sapphire substrate having a main surface which is a (11-20) plane,

the method further comprising:

forming a third nitride semiconductor layer of the first conductive type on the main surface of the sapphire substrate;

forming a second light emitting layer on the third nitride semiconductor layer; and

forming a fourth nitride semiconductor layer of the second conductive type on the second light emitting layer.