Photovoltaic Solar Cell With High-Haze Substrate
A solar cell includes a first substrate having a first surface and a second surface. A haze coating is provided over at least a portion of the first surface, the haze coating comprising an oxide coating incorporating nanoparticles. A first conductive layer is provided over at least a portion of the second surface. A semiconductor layer is provided over the first conductive layer. A second conductive layer is provided over at least a portion of the semiconductor layer.
1 . A solar cell, comprising:
a first substrate having a first surface and a second surface;
a haze coating over at least a portion of the first surface, the haze coating comprising an oxide coating incorporating nanoparticles;
a first conductive layer over at least a portion of the second surface;
a semiconductor layer over the first conductive layer; and
a second conductive layer over at least a portion of the semiconductor layer.
2 . The solar cell of claim 1 , further comprising an undercoating layer between the second surface and the first conductive layer.
3 . The solar cell of claim 1 , further comprising a second substrate over the second conductive layer.
4 . The solar cell of claim 1 , wherein the first substrate is float glass having a tin side and an air side, and the haze coating is over the tin side.
5 . The solar cell of claim 1 , wherein the haze coating comprises at least one oxide selected from the group consisting of silica, tin oxide, titania, aluminum oxide, zirconium oxide, phosphorous oxide, and mixtures thereof.
6 . The solar cell of claim 1 , wherein the nanoparticles are selected from the group consisting of titania, indium tin oxide, fluorine tin oxide, silica, alumina, colloidal silica, cerium oxide, and mixtures thereof.
7 . The solar cell of claim 1 , wherein the first conductive layer comprises oxides of one or more of Zn, Fe, Mn, Al, Ce, Sn, Sb, Hf, Zr, Ni, Zn, Bi, Ti, Co, Cr, Si, or In, or an alloy of two or more of these materials.
8 . The solar cell of claim 7 , wherein the first conductive layer comprises at least one dopant selected from F, In, Al, P, and Sb.
9 . The solar cell of claim 8 , wherein the first conductive layer comprises fluorine-doped tin oxide.
10 . The solar cell of claim 1 , wherein the semiconductor layer is selected from monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium celenide/sulfide.
11 . The solar cell of claim 1 , wherein the second conductive layer is selected from the group consisting of Zn, Fe, Mn, Al, Ce, Sn, Sb, Hf, Zr, Ni, Zn, Bi, Ti, Co, Cr, Si, or In, or an alloy of two or more of these materials.
12 . The solar cell of claim 2 , wherein the undercoating layer is a multilayer coating comprising a first layer comprising tin oxide or titania, and a second layer comprising a compositional uniform or non-uniform mixture comprising oxides of at least two of Sn, P, Si, Ti, Al, and Zr.
13 . A solar cell, comprising:
a first float glass substrate having a tin side and an air side;
a haze coating over at least a portion of the tin side, the haze coating comprising silica incorporating nanoparticles selected from the group consisting of titania, indium tin oxide, fluorine tin oxide, silica, alumina, colloidal silica, cerium oxide, and mixtures thereof;
a first conductive layer over at least a portion of the air side, the first conductive layer comprising oxides of one or more of Sn and In;
a semiconductor layer over the first conductive layer, the semiconductor layer comprising a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium celenide/sulfide; and
a second conductive layer over at least a portion of the semiconductor layer, the second conductive layer comprising oxides of one or more of Sn and In.
14 . The solar cell of claim 13 , wherein the first conductive layer comprises fluorine-doped tin oxide.
15 . A method of making a solar cell, comprising the steps of:
forming a haze coating over at least a portion of a tin side of a float glass substrate, the haze coating comprising silica incorporating nanoparticles selected from the group consisting of titania, indium tin oxide, fluorine tin oxide, silica, alumina, colloidal silica, cerium oxide, and mixtures thereof;
forming a first conductive layer over at least a portion of an air side of the float glass substrate, the first conductive layer comprising oxides of one or more of Sn and In;
forming a semiconductor layer over the first conductive layer, the semiconductor layer comprising a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium celenide/sulfide; and
forming a second conductive layer over at least a portion of the semiconductor layer, the second conductive layer comprising oxides of one or more of Sn and In.
16 . The method of claim 15 , wherein the haze coating is deposited by spray pyrolysis.
17 . The method of claim 16 , wherein the first conductive layer, the semiconductor layer, and the second conductive layer are deposited using methods selected from the group consisting of CVD and MSVD.
18 . The method of claim 15 , further including the steps of:
forming the first conductive layer by a method selected from CVD or MSVD;
heating the substrate; and
forming the haze layer by spray pyrolysis.