Method for fabricating thin-film semiconductor device for display
View Patent ↗A method for fabricating a thin-film semiconductor device for display according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a molybdenum metal layer above the undercoat layer; forming a gate electrode from the metal layer by an etching process; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer which is a polysilicon layer by annealing the non-crystalline silicon layer at a temperature in a range from 700° C. to 1400° C.; forming a source electrode and a drain electrode above the polysilicon layer; and performing hydrogen plasma treatment at a stage after the metal layer is formed and before the polysilicon layer is formed, using a radio frequency power in a range from 0.098 W/cm 2 to 0.262 W/cm 2 .
1. A method for fabricating a thin-film semiconductor device for display, the method comprising:
preparing a glass substrate;
forming, above the glass substrate, an undercoat layer for inhibiting diffusion of an impurity in the glass substrate, the undercoat layer including a nitride film;
forming a metal layer comprising molybdenum above the undercoat layer;
forming a gate electrode from the metal layer by a predetermined etching process;
forming a gate insulating film above the gate electrode;
forming a non-crystalline silicon layer above the gate insulating film;
forming a polysilicon layer by annealing the non-crystalline silicon layer at a temperature in a range from 700° C. to 1400° C., the non-crystalline silicon layer being crystallized by the annealing;
forming a source electrode and a drain electrode above the polysilicon layer; and
performing hydrogen plasma treatment at least once at a stage after the metal layer is formed and before the polysilicon layer is formed, the hydrogen plasma treatment being performed toward at least a region in the undercoat layer on which the gate electrode is formed,
wherein a radio frequency power when performing the hydrogen plasma treatment is in a range from 0.098 W/cm 2 to 0.262 W/cm 2 .
2. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the undercoat layer has a thickness of at least 100 nm.
3. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the undercoat layer has a thickness of at least 400 nm.
4. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein a concentration of oxygen atoms in the undercoat layer is in a range from 1×10 18 /cm 3 to 1×10 21 /cm 3 .
5. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein when performing the hydrogen plasma treatment, a processing time using the radio frequency power is in a range from 15 seconds to 60 seconds.
6. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the hydrogen plasma treatment is performed toward an interface between the undercoat layer and the gate electrode.
7. The method for fabricating the thin-film semiconductor device for display according to claim 6 ,
wherein the hydrogen plasma treatment is treatment for reducing a concentration of oxygen in proximity of the interface between the undercoat layer and the gate electrode.
8. The method for fabricating the thin-film semiconductor device for the display according to claim 1 ,
wherein the impurity in the glass substrate is sodium or phosphorus.
9. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the glass substrate contains oxygen atoms as a major component,
the undercoat layer has a force for bonding with oxygen atoms that is weaker than the glass substrate, and
the molybdenum has a force for bonding with oxygen atoms that is weaker than the glass substrate and stronger than the undercoat layer.
10. The method for fabricating the thin-film semiconductor device for display according to claim 1 , the method further comprising
forming a second non-crystalline silicon layer above the polysilicon layer between forming the polysilicon layer and forming the source electrode and drain electrode,
wherein the source electrode and the drain electrode are formed above the second non-crystalline silicon layer.
11. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the polysilicon layer includes a microcrystalline silicon layer having an average grain size in a range from 20 nm to 200 nm.
12. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the hydrogen plasma treatment is performed between forming the gate electrode and forming the gate insulating film.
13. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the hydrogen plasma treatment is performed between forming the gate insulating film and forming the non-crystalline silicon layer.
14. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the hydrogen plasma treatment is performed between forming the non-crystalline silicon layer and forming the polysilicon layer.
15. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein the hydrogen plasma treatment is performed between forming the metal layer and forming the gate electrode.
16. The method for fabricating the thin-film semiconductor device for display according to claim 1 ,
wherein when forming the polysilicon layer,
the non-crystalline silicon layer is annealed using a continuous wave laser.