Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, EL display panel, and EL display apparatus

1. A thin-film semiconductor device for a display apparatus, the thin-film semiconductor device comprising:

a substrate;

a gate electrode above the substrate;

a gate insulating film above the substrate to cover the gate electrode;

a semiconductor layer on the gate insulating film and above the gate electrode;

a first electrode above the semiconductor layer;

a second electrode above the semiconductor layer, the second electrode being in a same layer as the first electrode;

a first power supply line electrically connected to the second electrode and in a same layer as the second electrode;

an interlayer insulating film above the gate insulating film to cover the first electrode and the second electrode;

a gate line above the interlayer insulating film to cross the first power supply line, the interlayer insulating film being in a layer different from a layer including the gate electrode; and

a second power supply line in a same layer as the gate line and adjacent to the gate line,

wherein the gate electrode and the gate line are electrically connected via a first conductive portion passing through the gate insulating film and the interlayer insulating film,

the first power supply line and the second power supply line are electrically connected via a second conductive portion passing through the interlayer insulating film, and

capacitance per unit area in the interlayer insulating film interposed between a layer including the gate line and a layer including the first power supply line is smaller than capacitance per unit area in the gate insulating film interposed between the layer including the gate electrode and the layer including the first power supply line.

2. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the second power supply line has an approximately same height as the gate line, and

a width of the second power supply line corresponds to a width of an interval between two adjacent gate lines.

3. The thin-film semiconductor device for a display apparatus according to claim 2 ,

wherein a distance from the second power supply line to the two adjacent gate lines is greater than or equal to 4 μm.

4. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the second power supply line has an approximately same height as the gate line, and

the second power supply line is arranged near two adjacent gate lines to fill a gap between the two adjacent gate lines.

5. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the second power supply line has an approximately same height as the gate line, and

the second power supply line is wider than a width of the first power supply line.

6. The thin-film semiconductor device for a display apparatus according to claim 2 ,

wherein the second power supply line has a substantially uniform thickness, and is along a shape of a surface under the second power supply line.

7. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the semiconductor layer is an n-channel semiconductor layer, and

at least part of the second power supply line is arranged not to overlap the semiconductor layer.

8. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the semiconductor layer is a p-channel semiconductor layer, and

at least part of the second power supply line is arranged to overlap the semiconductor layer.

9. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the first electrode is a source electrode, and

the second electrode is a drain electrode.

10. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the first electrode is a drain electrode, and

the second electrode is a source electrode.

11. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the capacitance per unit area in the interlayer insulating film is less than 1.5×10 −4 F/m 2 , and

the capacitance per unit area in the gate insulating film is greater than or equal to 1.5×10 −4 F/m 2 .

12. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the semiconductor layer comprises a polycrystalline semiconductor layer.

13. The thin-film semiconductor device for a display apparatus according to claim 1 ,

wherein the second power supply line comprises one element selected from among Al, Cu, and Ag.

14. The thin-film semiconductor device for a display apparatus according to claim 13 ,

wherein the second power supply line is a multilayered line.

15. A method of manufacturing a thin-film semiconductor device for a display apparatus, comprising:

preparing a substrate;

forming a gate electrode above the substrate;

forming a gate insulating film above the substrate to cover the gate electrode;

forming a semiconductor layer on the gate insulating film and above the gate electrode;

forming a first electrode above the semiconductor layer and forming, in a same layer as the first electrode, a second electrode and a first power supply line electrically connected to the second electrode;

forming an interlayer insulating film above the gate insulating film to cover the first electrode and the second electrode;

forming a first contact hole through the gate insulating film and the interlayer insulating film, and forming a second contact hole through the interlayer insulating film; and

forming, by forming a metal film above the interlayer insulating film and patterning the metal film, (i) a gate line electrically connected to the gate electrode through the first contact hole and crossing the first power supply line, and (ii) a second power supply line electrically connected to the first power supply line through the second contact hole and adjacent to with the gate line,

wherein capacitance per unit area in the interlayer insulating film interposed between a layer including the gate line and a layer including the first power supply line is smaller than capacitance per unit area in the gate insulating film interposed between the layer including the gate electrode and the layer including the first power supply line.

16. The method of manufacturing a thin-film semiconductor device for display apparatus according to claim 15 ,

wherein the semiconductor layer formed in the forming the semiconductor layer is a non-crystalline semiconductor film, and

the method further comprises, between the forming the semiconductor layer and the forming the first electrode, crystallizing the non-crystalline semiconductor film by irradiating the non-crystalline semiconductor film with a laser to heat the non-crystalline semiconductor film to a temperature within a predetermined range.

17. An EL display panel comprising:

a thin-film semiconductor array device for a display apparatus including a plurality of the thin-film semiconductor devices for display apparatus according to claim 1 each of which is arranged for a pixel;

a plurality of lower electrodes each of which is arranged above the thin-film semiconductor array device for display apparatus for the pixel;

conductive portions each of which electrically connects the thin-film semiconductor device for display apparatus and one of the lower electrodes;

a light-emitting layer above the lower electrodes; and

an upper electrode above the light-emitting layer.

18. The EL display panel according to claim 17 , further comprising

a bank above the thin-film semiconductor array device for display apparatus, the bank having a plurality of openings,

wherein the light-emitting layer is in the openings.

19. The EL display panel according to claim 18 ,

wherein the openings correspond to the lower electrodes.

20. The EL display panel according to claim 17 ,

wherein the light-emitting layer is an organic light-emitting layer.

21. An EL display apparatus comprising

the EL display panel according to claim 17 .