Method for forming an integrated circuit

1. A method for forming an integrated circuit having a surface capable of being placed on another integrated circuit, on a printed circuit, or on a package, and having its other surface capable of receiving an additional integrated circuit, the method comprising the steps of:

a) forming openings in a front surface of a first semiconductor wafer, the depth of the openings being smaller than 10 μm, and filling them with a conductive material;

b) forming doped areas of components in active areas of the front surface, forming interconnection levels) on said front surface and leveling said surface supporting the interconnection levels;

c) covering with an insulating layer a front surface of a second semiconductor wafer, and leveling said surface coated with an insulator;

d) applying the front surface of the second wafer coated with insulator on the front surface of the first wafer supporting interconnection levels, to obtain a bonding between the two wafers;

e) forming vias from the rear surface of the second wafer, to reach the interconnection levels of the first wafer; and

f) thinning the first wafer to reach the openings filled with conductive material.

2. The method of claim 1 , wherein, at step d), the bonding between the first wafer and the second wafer is obtained by thermocompression bonding or by direct bonding.

3. The method of claim 1 , further comprising, at step c), a step of forming of conductive contacts at the surface of the insulator layer covering the front surface of the second wafer.

4. The method of claim 3 , wherein, at step d), each conductive contact comes into contact with a surface metallization of the interconnection levels of the first wafer and wherein, at step e), the vias are formed to reach the conductive contacts.

5. The method of claim 1 , wherein the thickness of the first wafer after thinning is smaller than the depth of the openings and ranges between 3 and 10 μm.

6. The method of claim 1 , wherein step a) of forming and filling of the openings of the first wafer comprises the steps of:

coating the walls of said openings with insulator; and

filling said insulated openings with a conductive material.

7. The method of claim 1 , further comprising the step of forming second openings at the same time as said openings, and of filling the second openings with an insulating material to fully insulate active areas of the front surface of the first wafer.

8. The method of claim 1 , wherein the second wafer has an initial thickness ranging between 650 and 750 μm and is thinned, after step d) of application of the front surfaces of each wafer against each other, down to a thickness ranging between 80 and 350 μm.

9. An integrated circuit having a surface capable of being placed on another integrated circuit, on a printed circuit, or on a package, and having its other surface capable of receiving an additional integrated circuit, said integrated circuit resulting from the dicing into chips of an assembly comprising:

a first semiconductor wafer having a substrate thickness smaller than 10 μm, having its front surface comprising doped areas of components in active areas and supporting interconnection levels, said first wafer comprising through insulated openings filled with a conductive material;

a second semiconductor wafer, having its front surface supporting an insulator layer, placed by thermocompression bonding or by direct bonding against the front surface of the first wafer supporting the interconnection levels, and having its rear surface supporting a redistribution layer comprising contacting areas, said second wafer comprising a plurality of through vias and not containing components; and

copper pillars, capable of receiving contacts from an additional integrated circuit, attached to the openings filled with conductive material on the rear surface side of the first wafer.

10. The integrated circuit of claim 9 , wherein the substrate thickness of the first wafer ranges between 3 and 10 μm and is smaller than the depth of the openings, and wherein the width of said openings is smaller than 1 μm.

11. The integrated circuit of claim 9 , wherein the first wafer further comprises second through openings filled with an insulating material, capable of fully insulating active areas.

12. The integrated circuit of claim 9 , wherein the substrate thickness of the second wafer ranges between 80 and 350 μm and wherein the width of the through vias ranges between 8 and 50 μm.

13. The integrated circuit of claim 11 , wherein the material for filling said openings is selected from the group comprising polysilicon, tungsten, and copper, and the material for filling the second openings is silicon oxide.