Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having a copper-containing material and applications therefor
View Patent ↗Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) comprising a preformed polycrystalline diamond (“PCD”) table including a thermally-stable region having a copper-containing material disposed interstitially between bonded diamond grains thereof, and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate, and a preformed PCD table having an interfacial surface bonded to the substrate and a generally opposing upper surface. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions. The preformed PCD table further includes a first region extending inwardly from the upper surface that includes a copper-containing material disposed therein and a second region extending inwardly from the interfacial surface that includes a nickel-containing material disposed therein.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including an interfacial surface bonded to the substrate and a generally opposing upper surface, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region extending inwardly from the upper surface to an intermediate depth, the first region including a copper-manganese-containing material disposed in at least a first portion of the plurality of interstitial regions; and
a second region extending inwardly from the interfacial surface and including a nickel-containing material disposed in at least a second portion of the plurality of interstitial regions.
2. The polycrystalline diamond compact of claim 1 wherein the copper-manganese-containing material consists essentially of copper and manganese.
3. The polycrystalline diamond compact of claim 1 wherein the nickel-containing material is provided from the substrate.
4. The polycrystalline diamond compact of claim 1 wherein the nickel-containing material includes a nickel alloy.
5. The polycrystalline diamond compact of claim 1 wherein the nickel-containing material is provided from the substrate and includes a nickel alloy, and wherein the copper-manganese-containing material consists essentially of copper and manganese.
6. The polycrystalline diamond compact of claim 1 wherein the copper-manganese-containing material exhibits a coefficient of thermal expansion of about 15×10 −6 per ° C. to about 20×10 −6 per ° C., a melting temperature of about 950° C. to about 1100° C., and a bulk modulus at 20° C. of about 120 GPa to about 140 GPa.
7. The polycrystalline diamond compact of claim 1 wherein the diamond-to-diamond bonding between the plurality of diamond grains of the polycrystalline diamond table is sufficiently strong so that the copper-manganese-containing material exhibits the ability to extrude out of the upper surface of the polycrystalline diamond table during heating thereof at a temperature of at least about 0 . 6 times the melting temperature of the copper-manganese-containing material, measured in absolute temperature, without fracturing the polycrystalline diamond table.
8. The polycrystalline diamond compact of claim 1 wherein the copper-manganese-containing material is infiltrated into the polycrystalline diamond table from the upper surface thereof to no further than the intermediate location therewithin.
9. The polycrystalline diamond compact of claim 1 wherein the intermediate depth is about 0.20 mm to about 1.5 mm.
10. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes a metallic catalyst in a residual amount.
11. The polycrystalline diamond compact of claim 10 wherein the metallic catalyst in the first region was used to initially sinter the polycrystalline diamond table.
12. The polycrystalline diamond compact of claim 1 wherein the copper-manganese-containing material occupies all of the plurality of interstitial regions of the first region.
13. The polycrystalline diamond compact of claim 1 wherein the substrate comprises a cobalt-cemented carbide substrate.
14. The polycrystalline diamond compact of claim 1 wherein the substrate comprises a cemented carbide substrate including the nickel-containing material as a cementing constituent.
15. The polycrystalline diamond compact of claim 1 wherein the first region extends laterally across an entire lateral dimension of the polycrystalline diamond table.
16. The polycrystalline diamond compact of claim 1 wherein the first region exhibits a generally annular geometry.
17. The polycrystalline diamond compact of claim 1 wherein the first region includes a residual amount of the copper-manganese-containing material.
18. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including an interfacial surface bonded to the substrate and a generally opposing upper surface, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region extending inwardly from the upper surface and including a copper-tin alloy disposed in at least a first portion of the plurality of interstitial regions; and
a second region extending inwardly from the interfacial surface and including a nickel-containing material disposed in at least a second portion of the plurality of interstitial regions;
wherein the plurality of diamond grains and the nickel-containing material of the second region collectively exhibit a coercivity of 115 Oesrsteds or more and a specific magnetic saturation of about 15 Gauss·cm 3 /grams (“G·cm 3 /g”) or less.
19. The polycrystalline diamond compact of claim 18 wherein the nickel-containing material is provided from the substrate.
20. The polycrystalline diamond compact of claim 18 wherein the nickel-containing material includes a nickel alloy.
21. The polycrystalline diamond compact of claim 18 wherein the nickel-containing material is provided from the substrate and includes a nickel alloy, and wherein the copper-tin alloy includes a eutectic amount of copper and tin.
22. The polycrystalline diamond compact of claim 18 wherein the copper-tin alloy is infiltrated into the polycrystalline diamond table from the upper surface thereof to no further than an intermediate location therewithin.
23. The polycrystalline diamond compact of claim 18 wherein the first region extends inwardly from the upper surface to an intermediate depth of about 0.20 mm to about 1.5 mm.
24. The polycrystalline diamond compact of claim 22 wherein the intermediate depth is about 0.65 mm to about 0.90 mm.
25. The polycrystalline diamond compact of claim 18 wherein the substrate comprises a cobalt-cemented carbide substrate.
26. The polycrystalline diamond compact of claim 18 wherein the substrate comprises a cemented carbide substrate including the nickel-containing material as a cementing constituent.
27. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including an interfacial surface bonded to the substrate and a generally opposing upper surface, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region extending inwardly from the upper surface to an intermediate depth, the first region including a copper-manganese-containing material disposed in at least a first portion of the plurality of interstitial regions; and
a second region extending inwardly from the interfacial surface and including a cobalt-containing material disposed in at least a second portion of the plurality of interstitial regions.