Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
View Patent ↗A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
1. A method for providing a magnetic read transducer including a magnetoresistive sensor, wherein the magnetoresistive sensor includes a cap layer overlaying a free layer, the method comprising:
situating the cap layer with a first thickness to absorb boron from the free layer to the cap layer; annealing the magnetoresistive sensor;
diffusing boron from the free layer and absorbing boron by the cap layer during the annealing the magnetoresistive sensor;
forming the cap layer as amorphous, the amorphous cap layer including titanium boride, and situating the amorphous cap layer to at least substantially inhibit the free layer from crystallizing in an orientation other than a body center cube crystal structure with a 100 plane (bcc (100)); and
reducing the cap layer thickness to a second thickness, after annealing the magnetoresistive sensor.
2. The method as in claim 1 , wherein the cap layer includes one of elemental titanium, hafnium, zirconium, niobium, tantalum, and ruthenium.
3. The method as in claim 1 , wherein, before annealing the magnetoresistive sensor, the free layer includes i.) CoFe, and ii.) at least one of CoB, CoB and Fe, and Co 1-x Fe x B y , wherein x is 0 to 0.9, and y is 0.1 to 0.25.
4. The method as in claim 1 , wherein the first thickness is in a range of 40 angstroms to 200 angstroms, and the second thickness is either 20 angstroms, or in a range of 5 angstroms to 50 angstroms.
5. The method as in claim 1 , wherein reducing the cap layer thickness to the second thickness comprises reducing the cap layer thickness to less than 20angstroms, and less than one-half of the first thickness.
6. The method as in claim 1 , further comprising overlaying the cap layer with a ruthenium layer, and overlaying the ruthenium layer with a tantalum layer, before annealing the magnetoresistive sensor.
7. The method as in claim 1 , further comprising overlaying the cap layer with a layer, after reducing the cap layer thickness to the second thickness.
8. The method as in claim 7 , wherein the layer overlaying the cap layer includes a nickel-iron layer overlaying the cap layer, and a ruthenium layer or a tantalum layer overlaying the nickel-iron layer.
9. The method as in claim 1 , wherein reducing the cap layer thickness comprises etching the cap layer via one of ion-beam milling, plasma etching, and chemical wet etching.
10. A method for providing a magnetic read transducer including a magnetoresistive sensor, wherein the magnetoresistive sensor includes a cap layer overlaying a free layer, the method comprising:
forming the cap layer as amorphous, the amorphous cap layer including titanium boride; and situating the amorphous cap layer to at least substantially inhibit the free layer from crystallizing in an orientation other than a body center cube crystal structure with a 100 plane (bcc (100)).
11. The method as in claim 10 , wherein the cap layer includes one of elemental titanium, hafnium, zirconium, niobium, tantalum, and ruthenium.
12. The method as in claim 10 , wherein the free layer includes i.) CoFe, and ii.) at least one of CoB, CoB and Fe, and Co 1-x Fe x B y , wherein x is 0 to 0.9, and y is 0.1 to 0.25.