Fastening device
View Patent ↗A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.
1. A fastening device comprising:
a semiconductor body with an integrated circuit;
a dielectric passivation layer provided on the surface of the semiconductor body;
a trace provided underneath the passivation layer;
an oxide layer provided beneath the trace;
a connecting component that forms a frictional connection between a component arranged above the passivation layer and the semiconductor body;
a formation passing through the passivation layer and the oxide layer, the formation having a bottom surface; and
a conductive layer provided on the bottom surface and/or on a lateral surface of the formation, the connecting component having an organic polymer and forms an electrical connection between the conductive layer and the component,
wherein the component is provided as a first part and the connecting component is provided as a second part of an integrated component formed underneath the passivation layer.
2. The fastening device according to claim 1 , wherein one elevation is formed on the bottom surface.
3. The fastening device according to claim 2 , wherein a plurality of elevations are formed on the bottom surface.
4. The fastening device according to claim 2 , wherein the elevation is implemented as a tungsten plug.
5. The fastening device according to claim 2 , wherein the elevation is completely enclosed by the connecting component.
6. The fastening device according to claim 2 , wherein the elevation forms a material-to-material connection with the connecting component.
7. The fastening device according to claim 1 , wherein the conductive layer contains silicon.
8. The fastening device according to claim 1 , wherein the conductive layer is made of a doped polysilicon layer and a silicide layer.
9. The fastening device according to claim 1 , wherein the conductive layer is composed of a metallic trace.
10. The fastening device according to claim 1 , wherein the connecting component completely fills the formation.
11. The fastening device according to claim 1 , wherein the connecting component contains a conductive adhesive.
12. The fastening device according to claim 1 , wherein the component is a control electrode of a gas sensor transistor.
13. The fastening device according to claim 1 , wherein the passivation layer forms a plateau, and the component rests on the plateau, or wherein the connecting component outside of the formation forms a large bearing region on the passivation layer, and the component rests on the bearing region.