METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE THEREFOR

1 . A method for manufacturing a semiconductor component, comprising:

providing a leadframe partially embedded in a mold compound, the leadframe having a first major surface and a second major surface opposite the first major surface, the leadframe comprising a plurality of flags, a plurality of leads, and a tiebar, and wherein a semiconductor device is coupled to the first major surface of a first flag;

exposing a first edge, the first edge extending from the second major surface a first distance toward the first major surface, wherein the first distance is less than the thickness of the leadframe and greater than fifty percent of the thickness of the leadframe;

forming a first material over a portion of the first edge;

separating the leadframe into at least two portions; and

separating the mold compound into at least two portions.

2 . The method of claim 1 , wherein exposing the first edge comprises sawing the leadframe.

3 . The method of claim 1 , wherein exposing the first edge comprises etching the leadframe.

4 . The method of claim 1 , wherein exposing the first edge comprises removing a portion of the tiebar and leaving a remaining portion of the tiebar.

5 . The method of claim 4 , wherein separating the leadframe into at least two portions comprises separating the remaining portion of the tiebar into at least two portions.

6 . The method of claim 5 , wherein separating the remaining portion of the tiebar into at least two portions comprises sawing through the remaining portion of the tiebar.

7 . The method of claim 6 , wherein separating the remaining portion of the tiebar into at least two portions and separating the mold compound into at least two portions comprises a single saw cut through the remaining portion of the tiebar and through the mold compound.

8 . The method of claim 1 , wherein forming the first material over a portion of the first edge comprises plating the first material.

9 . The method of claim 1 , wherein forming the first material over a portion of the first edge comprises electroplating the first material onto the first edge.

10 . The method of claim 1 , wherein forming the first material over a portion of the first edge comprises forming an electrically conductive material over the portion of the first edge.

11 . The method of claim 10 , wherein forming the first material over a portion of the first edge comprises forming an anti-oxidizing coating over the first edge.

12 . The method of claim 1 , wherein forming the first material over a portion of the first edge includes barrel plating the first material over the portion of the first edge.

13 . The method of claim 1 , wherein the first material comprises tin.

14 . The method of claim 1 , wherein separating the mold compound into at least two portions comprises sawing through the mold compound.

15 . A semiconductor component, comprising:

a semiconductor device coupled to an electrical interconnect structure, wherein the semiconductor device is embedded in a mold compound and the electrical interconnect structure is partially embedded in the mold compound, and wherein the electrical interconnect structure comprises a plurality of leads, each lead having an outer edge; and

a first material over a portion of the outer edge of at least one of the plurality of leads, the first material over more than fifty percent of the outer edge but less than one hundred percent of the outer edge of the least one of the plurality of leads.

16 . The semiconductor component of claim 15 , wherein the first material was plated over the portion of the outer edge of at least one of the plurality of leads.

17 . The semiconductor component of claim 15 , wherein the first material comprises an electrically conductive material.

18 . The semiconductor component of claim 15 , wherein the first material comprises tin.

19 . An automobile, comprising:

an engine compartment;

a semiconductor component within the engine compartment, the semiconductor component comprising a semiconductor device coupled to an electrical interconnect structure, wherein the semiconductor device is embedded in a mold compound and the electrical interconnect structure is partially embedded in the mold compound, and wherein the electrical interconnect structure comprises a lead having an outer edge; and

a first material comprising tin plated over more than fifty percent and less than one hundred percent of the outer edge of the lead.

20 . A method for manufacturing a semiconductor component, comprising:

providing a semiconductor device coupled to one or more electrical interconnect structures partially embedded in a mold compound;

sawing a trench into a portion of the one or more electrical interconnect structures and exposing a sidewall of the trench, wherein the trench sidewall extends a first distance into the portion of the one or more electrical interconnect structures, and wherein the first distance is less than the thickness of the one or more electrical interconnect structures and greater than fifty percent of the thickness of the one or more electrical interconnect structures;

electroplating a first material over the exposed sidewall of the trench; and

sawing completely through the trench and mold compound.