IP Library Granted Patent US 9,533,889
Granted Patent B2
US 9,533,889 · App. 13/694,356 · Granted Jan 3, 2017

Unitary graphene layer or graphene single crystal

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Quick Facts
Patent No.
US 9,533,889
App. No.
13/694,356
Granted
Jan 3, 2017
Kind
B2
Abstract

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

Claims (32)

1. A unitary graphene oxide layer or graphene oxide single crystal containing closely packed and chemically bonded parallel graphene oxide planes having an inter plane spacing of 0.335 to 0.40 nm, a thickness greater than 10 nm, an electrical conductivity greater than 1,500 S/cm, a thermal conductivity greater than 600 W/mK, and a physical density greater than 1.8 g/cm3, and an oxygen content of 0.01% to 10% by weight, which unitary graphene oxide layer or graphene oxide single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein an average mis-orientation angle between two graphene oxide planes is less than 10 degrees.

2. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , containing no discrete graphite flake or graphene platelet dispersed therein.

3. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , containing no complete grain boundary therein.

4. The unitary oxide graphene layer or graphene oxide single crystal of claim 1 , wherein said graphene oxide gel is produced from particles of a natural graphite or artificial graphite composed of graphite crystallites having an initial length L a in the crystallographic a-axis direction, an initial width L b in the b-axis direction, and a thickness L c in the c-axis direction, and the unitary graphene layer or graphene single crystal has a length or width greater than the initial L a and L b of the graphite crystallites.

5. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said graphene oxide gel is produced from particles of a natural graphite or artificial graphite composed of graphite crystallites having an initial length L a in the crystallographic a-axis direction, an initial width L b in the b-axis direction, and a thickness L c in the c-axis direction and the unitary graphene layer or graphene single crystal has a length or width at least greater than twice the initial L a or twice the initial L b of the graphite crystallites.

6. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein the chemically bonded parallel graphene planes contain a combination of sp 2 and sp 3 electronic configurations.

7. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said unitary graphene layer or graphene single crystal has a length or width no less than 100 μm.

8. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said unitary graphene oxide layer or graphene oxide single crystal has a length or width no less than 1 mm.

9. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said unitary graphene oxide layer or graphene oxide single crystal has a length or width no less than 1 cm.

10. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein the heat-treating temperature is from 100° C. to 1,000° C. and said unitary graphene oxide layer or graphene oxide single crystal has a thermal conductivity greater than 600 W/mK or electrical conductivity greater than 2,000 S/cm.

11. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein the heat-treating temperature is from 1,000° C. to 1,500° C. and said unitary graphene oxide layer or graphene oxide single crystal has a thermal conductivity greater than 1,300 W/mK or electrical conductivity greater than 3,000 S/cm.

12. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein the heat-treating temperature is from 1500° C. to 2,500° C. and said unitary graphene oxide layer or graphene oxide single crystal has a thermal conductivity greater than 1,600 W /mK or electrical conductivity greater than 5,000S/cm.

13. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein the heat-treating temperature is from 2,500° C. to 3,250° C. and said unitary graphene oxide layer or graphene oxide single crystal has a thermal conductivity greater than 1,700 W/mK or electrical conductivity greater than 10,000 S/cm.

14. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having a thickness greater than 1 μm.

15. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , which is optically opaque.

16. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having a thickness greater than 10 μm.

17. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having an oxygen content from 0.01% to 5% by weight.

18. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said graphene oxide gel is composed of graphene oxide molecules dispersed in an acidic medium having a pH value of no higher than 5 and said graphene oxide molecules have an oxygen content no less than 20% by weight while in a gel state.

19. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said graphene oxide gel is obtained by immersing a graphitic material in a powder or fibrous form in an oxidizing liquid medium in a reaction vessel at a reaction temperature for a length of time sufficient to obtain a graphene oxide gel composed of graphene oxide molecules dispersed in the liquid medium and said graphene oxide molecules have an oxygen content no less than 20% by weight and a molecular weight less than 43,000 g/mole while in a gel state.

20. The unitary graphene oxide layer or graphene oxide single crystal of claim 18 , wherein said graphene oxide molecules have a molecular weight less than 4,000 g/mole while in a gel state.

21. The unitary graphene oxide layer or graphene oxide single crystal of claim 18 , wherein said graphene oxide molecules have a molecular weight between 200 g/mole and 4,000 g/mole while in a gel state.

22. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , which is produced by depositing a layer of graphene oxide gel onto a substrate surface and by removing a residual liquid from said layer of deposited graphene oxide gel.

23. The unitary graphene oxide layer or graphene single crystal of claim 22 , wherein said layer of deposited graphene oxide gel is subjected to a heat treatment temperature of at least 150° C. for thermal reduction and/or re-graphitization.

24. The unitary graphene oxide layer or graphene oxide single crystal of claim 22 , wherein said layer of deposited graphene oxide gel is subjected to a heat treatment temperature of at least 1 500° C. for thermal reduction and/or re-graphitization.

25. The unitary graphene oxide layer or graphene oxide single crystal of claim 22 , wherein said layer of deposited graphene oxide gel is subjected to a heat treatment temperature from 300° C. to 1,500° C. for thermal reduction and/or re-graphitization.

26. The unitary graphene oxide layer or graphene oxide single crystal of claim 22 , wherein said layer of deposited graphene oxide gel is subjected to a heat treatment temperature from 1,500° C. to 2,500° C. for re-graphitization.

27. The unitary graphene oxide layer or graphene oxide single crystal of claim 22 , wherein said layer of deposited graphene oxide gel is subjected to a heat treatment temperature greater than 2,500° C.

28. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , wherein said graphene oxide gel is produced from oxidation of a graphitic material selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof.

29. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having a Rockwell hardness value greater than 60.

30. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having an electrical conductivity greater than 1,500 S/cm, a thermal conductivity greater than 600 W/mK, a physical density greater than 1.8 g/cm 3 , and/or a tensile strength greater than 40 MPa.

31. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having an electrical conductivity greater than 3,000 S/cm, a thermal conductivity greater than 1,000 W/mK, a physical density greater than 2.0 g/cm 3 , and/or a tensile strength greater than 80 MPa.

32. The unitary graphene oxide layer or graphene oxide single crystal of claim 1 , having an electrical conductivity greater than 5,000 S/cm, a thermal conductivity greater than 1,500 W/mK, a physical density greater than 2.1 g/cm 3 and/or a tensile strength greater than 100 MPa.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 17, 2019
From: NANOTEK INSTRUMENTS, INC.
To: GLOBAL GRAPHENE GROUP, INC.
Reel/Frame 049784/0650 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2016
From: XIONG, WEI
To: NANOTEK INSTRUMENTS, INC
Reel/Frame 038330/0992 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2016
From: ZHAMU, ARUNA
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 038463/0095 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2016
From: JANG, BOR Z.
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 038464/0403 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2016
From: XIONG, WEI
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 038426/0899 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2016
From: WANG, MINGCHAO
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 038427/0611 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2013
From: WANG, MINGCHAO; XIONG, WEI; ZHAMU, ARUNA; JANG, BOR Z.
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 031660/0748 →