Optoelectronic component and method for producing an optoelectronic component
View Patent ↗An optoelectronic component comprising an optoelectronic semiconductor chip ( 104 ) having a contact side ( 106 ) and a radiation coupling-out side ( 108 ) situated opposite; a chip carrier ( 102 ), on which the semiconductor chip ( 104 ) is applied via its contact side ( 106 ); a radiation conversion element ( 110 ) applied on the radiation coupling-out side ( 108 ); and a reflective potting compound ( 112 ), which is applied on the chip carrier ( 102 ) and laterally encloses the semiconductor chip ( 104 ) and the radiation conversion element ( 110 ); wherein the potting compound ( 112 ) adjoins an upper edge of the radiation conversion element ( 110 ) in a substantially flush fashion, such that a top side of the radiation conversion element ( 110 ) is free of the potting compound ( 112 ).
1. A method for producing an optoelectronic component, comprising:
applying an optoelectronic semiconductor chip, having a contact side and a radiation coupling-out side situated opposite the contact side, on a chip carrier, the optoelectronic semiconductor chip being applied to the chip carrier via its contact side;
applying a radiation conversion element on the radiation coupling-out side of the optoelectronic semiconductor chip, the radiation conversion element having a shape that widens from the radiation coupling-out side to the top side of the radiation conversion element so as to form a stopping edge at the radiation conversion element; and
applying a reflective potting compound on the chip carrier so as to laterally enclose and contact both the semiconductor chip and the radiation conversion element such that a top side of the radiation conversion element is free of the potting compound,
wherein the stopping edge forms a boundary for a lateral wetting during application of the potting compound such that the potting compound adjoins the top side of the radiation conversion element in a flush fashion.
2. The method as claimed in claim 1 , wherein the semiconductor chip is electrically contact-connected via the chip carrier.
3. The method as claimed in claim 1 , wherein the semiconductor chip is electrically contact-connected via its radiation coupling-out side.
4. The method as claimed in claim 3 , wherein the radiation coupling-out side is electrically contact-connected to the chip carrier via a conductor connection.
5. The method as claimed in claim 4 , wherein the conductor connection is embedded in the potting compound.
6. The method as claimed in claim 4 , wherein the conductor connection has a bonding wire.
7. method as claimed in claim 6 , wherein a vertical extent of the bonding wire above the radiation coupling-out side is less than a height of the radiation conversion element above the radiation coupling-out side.
8. The method as claimed in claim 6 , wherein a vertical extent of the bonding wire above the radiation coupling-out side is in the range of 20 to 200 μm.
9. The method as claimed in claim 1 , wherein the potting compound comprises silicone.
10. The method as claimed in claim 1 , wherein the potting compound comprises dispersed scattering particles.
11. method as claimed in claim 10 , wherein the scattering particles comprise titanium dioxide.
12. The method as claimed in claim 1 , further comprising applying an optical element on the radiation conversion element.
13. The method as claimed in claim 1 , wherein the potting compound is introduced by injection.
14. The method as claimed in claim 13 , wherein the potting compound is introduced by compression molding.
15. The method as claimed in claim 14 , wherein the potting compound is introduced through an opening provided in the chip carrier.
16. The method as claimed in claim 6 , wherein a vertical extent of the bonding wire above the radiation coupling-out side is 40 μm.
17. The method as claimed in claim 12 , wherein said optical element is a lens.