DEVICE ANALYSIS

1 .- 9 . (canceled)

10 . A method, comprising:

performing an analysis of an electronic device sample by measuring a property at a plurality of points of said electronic device sample, and

in advance of said analysis subjecting said plurality of points to at least one treatment that increases the difference in said property between at least two elements of said electronic device sample.

11 . A method according to claim 10 , wherein said property is selected from the group consisting of: a mechanical property; a physical property; a chemical property and an electrical property.

12 . A method according to claim 10 , wherein said analysis is performed by a technique selected from the group consisting of: scanning electron microscopy, transmission electron microscopy and atomic force microscopy.

13 . A method according to claim 10 , wherein said at least two elements are at least two layers of a stack of layers.

14 . A method according to claim 13 , wherein said electronic device comprises a stack of layers, and said treatment comprises cutting through said stack of layers in a way that generates a difference in surface morphology at the cut surface between at least two of said layers of the stack.

15 . A method according to claim 10 , wherein said treatment is a chemical treatment.

16 . A method according to claim 15 , wherein said property is electron scattering intensity, and said chemical treatment increases the contrast in electron scattering intensity between said at least two elements.

17 . A method according to claim 10 , comprising preparing said electronic device sample by exposing an inner portion of said electronic device.

18 . A method according to claim 10 , wherein said electronic device comprises an array of thin film transistors.