IP Library Granted Patent US 9,383,074
Granted Patent B2
US 9,383,074 · App. 13/703,788 · Granted Jul 5, 2016

Light-emitting device and production method for synthetic resin globe for said light-emitting device

Inventors: Shinji Kadoriku (Osaka, JP); Ryoma Murase (Osaka, JP)
Assignee: Panasonic Intellectual Property Management Co., Ltd.
F21V3/02B29C45/0055B29C49/02F21K9/135F21V3/049F21V3/0418F21V7/0008F21V29/004B29C49/06B29C2791/006B29C2791/007B29C2793/009B29L2031/747F21K9/50F21K9/90F21V13/02F21Y2101/02
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,383,074
App. No.
13/703,788
Granted
Jul 5, 2016
Kind
B2
Abstract

A synthetic resin globe for a light-emitting device is produced by molding an intermediate product with an injection molding die, softening the intermediate product in a heating apparatus, expanding it with compressed air in a die to form a globe shape, transferring a concavo-convex shape formed in a core of the injection molding die to form a concavo-convex shape on an inner wall of the intermediate product, so that the concavo-convex shape can be easily formed into a desired shape in a lower part of an inner wall of the globe.

Claims (53)

1. A light-emitting device comprising:

a base;

a semiconductor light-emitting element mounted on the base;

a globe covering the base and the semiconductor light-emitting element;

a reflection plate, above the semiconductor light emitting element and covered by the globe, positioned to direct light generated by the semiconductor light-emitting element to a lower position of the globe lower than the reflection plate, and not to reflect the light generated by the semiconductor light-emitting element to an upper position of the globe higher than the reflection plate; and

a concavo-convex part located on the globe only at the lower position of the globe lower than the reflection plate, wherein

the reflection plate comprises a first reflection plate and a second reflection plate,

the first reflection plate is positioned directly above the semiconductor light-emitting element,

the second reflection plate is provided separately from the first reflection plate and positioned above the first reflection plate, and

the first reflection plate has a window part as an opening in the reflection plate, and a light emitted from the semiconductor light-emitting element goes to the second reflection plate through the first reflection plate via the window part.

2. The light-emitting device according to claim 1 , comprising a plurality of said semiconductor light emitting element, wherein

the first reflection plate is arranged corresponding to each of the semiconductor light-emitting elements.

3. The light-emitting device according to claim 1 , further comprising a heat sink which includes a portion positioned under the base and a portion positioned under the globe.

4. The light-emitting device according to claim 1 , wherein

a height of the concavo-convex part is 0.1 mm or less from the inner wall of the globe.

5. The light-emitting device according to claim 1 , wherein

the concavo-convex part comprises a first concavo-convex part and a second concavo-convex part provided on the first concavo-convex part.

6. The light-emitting device according to claim 5 , comprising a plurality of the first and second concavo-convex parts, wherein

the second concavo-convex parts are provided on the first concavo-convex parts, respectively.

7. The light-emitting device according to claim 5 , wherein

the first concavo-convex part and the second concavo-convex part each have a spherical shape.

8. The light-emitting device according to claim 7 , wherein

a height of the second concavo-convex part is 0.15 mm or less from a surface of the first concavo-convex part.

9. The light-emitting device according to claim 3 , wherein:

the globe includes an insertion part inserted in the heat sink and having an outer wall with a stepped part; and

a thickness of the stepped part is smaller than a thickness of the globe.

10. The light-emitting device according to claim 9 , wherein

the stepped part is provided between a light passage part of the globe and the insertion part.

11. The light-emitting device according to claim 9 , wherein

a thickness of a lower part of the stepped part is smaller than ⅔ of a thickness of an upper part of the stepped part.

12. The light-emitting device according to claim 9 , wherein

a thickness of a lower part of the stepped part is 0.4 mm or more.

13. The light-emitting device according to claim 1 , wherein

a side surface part of the globe corresponding to a position of the semiconductor light-emitting element expands outward,

a part of the globe positioned above the semiconductor light-emitting element has a spherical shape, and

a shape of the globe is front-back and left-side symmetrical.

14. The light emitting device according to claim 1 , wherein the concavo-convex part includes a semispherical shape or a Fresnel lens shape.

15. The light emitting device according to claim 1 , wherein the concavo-convex part is on an inner wall of the globe.

16. A light-emitting device comprising:

a base;

a semiconductor light-emitting element mounted on the base;

a globe covering the base and the semiconductor light-emitting element;

a reflection plate, above the semiconductor light emitting element and covered by the globe, which reflects light generated from the semiconductor light-emitting element; and

a concavo-convex part located on the globe only at a lower position of the globe lower than the reflection plate,

wherein a thickness of the globe at a higher position than the reflection plate is thinner than a combined thickness of the concavo-convex part and the globe at the lower position,

the reflection plate comprises a first reflection plate and a second reflection plate,

the first reflection plate is positioned directly above the semiconductor light-emitting element,

the second reflection plate is provided separately from the first reflection plate and positioned above the first reflection plate, and

the first reflection plate has a window part as an opening in the reflection plate, and a light emitted from the semiconductor light-emitting element goes to the second reflection plate through the first reflection plate via the window part.

17. The light emitting device according to claim 16 , wherein the concavo-convex part is on an inner wall of the globe.

18. The light-emitting device according to claim 1 , wherein the second reflection plate is positioned nearer a center of the globe than the first reflection plate.

19. The light-emitting device according to claim 1 , wherein the first reflection plate reflects the light to a lower direction while the second reflection plate reflects the light to a lateral direction.

20. The light-emitting device according to claim 1 , wherein a surface shape of the first reflection plate for reflecting the light is different from a surface shape of the second reflection plate for reflecting the light.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ERRONEOUSLY FILED APPLICATION NUMBERS 13/384239, 13/498734, 14/116681 AND 14/301144 PREVIOUSLY RECORDED ON REEL 034194 FRAME 0143. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Dec 24, 2020
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 056788/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2014
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 034194/0143 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2013
From: KADORIKU, SHINJI; MURASE, RYOMA
To: PANASONIC CORPORATION
Reel/Frame 029991/0651 →
Priority Claims (1)
JP 2011-057510 · Mar 16, 2011 · national
Continuity (1)
Related Publication 20130083526A1 · Apr 4, 2013