IP Library Granted Patent US 9,216,493
Granted Patent B2
US 9,216,493 · App. 13/705,693 · Granted Dec 22, 2015

Methods of improving sintering of PCD using graphene

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Quick Facts
Patent No.
US 9,216,493
App. No.
13/705,693
Granted
Dec 22, 2015
Kind
B2
Abstract

A method of making diamond including mixing graphene with diamond seed to form a powder mixture, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature; and a method of making a polycrystalline diamond compact including mixing graphene in diamond powder to form a powder mixture with less than about 50% graphene by weight, and then sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature.

Claims (27)

1. A method of making diamond comprising:

sintering nano-scale graphene having an aspect ratio of 500 to 2000, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure of up to about 75 kBar.

2. The method of claim 1 , wherein the sintering is performed for a time period of about 5 minutes.

3. The method of claim 1 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400° C.

4. The method of claim 1 , wherein the sintering is performed at a pressure of at least about 45 kBar and a temperature of at least about 700° C.

5. The method of claim 1 , wherein the sintering is performed at a pressure of at least about 55 kBar and a temperature of at least about 1000° C.

6. A method of making diamond comprising:

mixing nano-scale graphene having an aspect ratio of 500 to 2000 with diamond seed to form a powder mixture; and

sintering the powder mixture, in absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.

7. The method of claim 6 , wherein the diamond seed is equal to or greater than about 0.01% by weight of the powder mixture.

8. The mixture of claim 6 , wherein the diamond seed is equal to or greater than about 0.1% by weight of the powder mixture.

9. The method of claim 6 , wherein the sintering is performed for a time period of about 5 minutes.

10. The method of claim 6 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400° C.

11. The method of claim 6 , wherein the sintering is performed at a pressure of at least about 45 kBar and a temperature of at least about 700° C.

12. The method of claim 6 , wherein the sintering is performed at a pressure of at least about 55 kBar and a temperature of at least about 1000° C.

13. A method of making a polycrystalline diamond compact comprising:

Mixing nano-scale graphene having an aspect ratio of 500 to 2000 in diamond powder to form a powder mixture with less than about 90% graphene by volume; and

sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.

14. The method of claim 13 , wherein the powder mixture includes about 1% to about 10% graphene by volume.

15. The method of claim 13 , wherein the sintering is performed for a time period of at least about 5 minutes.

16. The method of claim 13 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400° C.

17. The method of claim 13 , wherein the sintering is performed at a pressure of at least about 45 kBar and a temperature of at least about 700° C.

18. The method of claim 13 , wherein the sintering is performed at a pressure of at least about 55 kBar and a temperature of at least about 1000° C.

19. The method of claim 1 , wherein the sintering is performed for a time period of up to about 10 minutes.

20. The method of claim 1 , wherein the high pressure and the high temperature of the sintering process provide a driving force of greater than about 2 kJ/mol when the graphene is converted to diamond.

21. The method of claim 6 , wherein the sintering is performed for a time period of up to about 10 minutes.

22. The method of claim 6 , wherein the high pressure and the high temperature of the sintering process provide a driving force of greater than about 2 kJ/mol when the graphene is converted to diamond.

Assignments (6)
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2013
From: MALIK, ABDS-SAMI; ZHANG, HUI
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 029781/0236 →