Semiconductor light-emitting device and method for manufacturing the same

1. A method for manufacturing semiconductor light-emitting devices, comprising the steps of:

providing a multi-layer semiconductor film comprising a surface;

roughening the surface of the multi-layer semiconductor film to form a scattering surface;

re-growing a semiconductor layer on the scattering surface; and

roughening the semiconductor layer to form a sub-scattering portion on the scattering surface by wet etching;

wherein the sub-scattering portion is structurally smaller than the scattering surface, and the semiconductor layer comprises different crystal planes.

2. The method according to claim 1 , further comprising the steps of:

providing a substrate; and

growing the multi-layer semiconductor film on the substrate, wherein the scattering surface is opposite to the substrate.

3. The method according to claim 1 , wherein the step of growing the multi-layer semiconductor film comprises forming a light emitting layer for emitting light.

4. The method according to claim 1 , wherein the wet etching solution comprises hydrofluoric acid or nitric acid.

5. The method according to claim 1 , wherein the roughness scale of the sub-scattering portion is nano scale.

6. The method according to claim 1 , further comprising

re-growing a second semiconductor layer on the first semiconductor layer and the scattering surface after the step of roughening the semiconductor layer.