Magnetic detecting element and magnetic sensor utilizing same
View Patent ↗A magnetic detecting element includes a laminated structure where a fixed magnetic layer and a free magnetic layer are laminated through a non-magnetic material layer, wherein the fixed magnetic layer is a self-pinned type where a first magnetic layer and a second magnetic layer are laminated through a non-magnetic intermediate layer and the first magnetic layer and the second magnetic layer are antiparallelly magnetization-fixed, and the second magnetic layer is in contact with the non-magnetic material layer. The first magnetic layer is formed using FeCo serving as a material having a higher coercive force than the second magnetic layer. The film thickness of the first magnetic layer falls within a range greater than or equal to 10 Å and less than or equal to 17 Å, and is thinner than the film thickness of the second magnetic layer. The non-magnetic intermediate layer is formed using Rh.
1. A magnetic detecting element used in a magnetic sensor embedding therein no permanent magnet, the magnetic detecting element comprising:
a laminated structure where a fixed magnetic layer and a free magnetic layer are laminated through a non-magnetic material layer, wherein
the fixed magnetic layer is a self-pinned type where a first magnetic layer and a second magnetic layer are laminated through a non-magnetic intermediate layer and the first magnetic layer and the second magnetic layer are antiparallelly magnetization-fixed, the magnetization of the first magnetic layer is fixed, and the second magnetic layer is in contact with the non-magnetic material layer,
the first magnetic layer is formed using FeCo serving as a material having a higher coercive force than the second magnetic layer,
a film thickness of the first magnetic layer falls within a range greater than or equal to 10Å and less than or equal to 17 Å, and is thinner than a film thickness of the second magnetic layer,
a ratio of the thickness of the first and second layers is adjusted so that a difference in magnetization amount between the first magnetic layer and the second magnetic layer is substantially zero, and
the non-magnetic intermediate layer is formed using Rh.
2. The magnetic detecting element according to claim 1 , wherein
a film thickness of the non-magnetic intermediate layer is formed within a range greater than or equal to 4.9 Å and less than or equal to 5.9 Å.
3. The magnetic detecting element according to claim 1 , wherein
the film thickness of the first magnetic layer is greater than or equal to 10 Å and less than or equal to 13 Å.
4. The magnetic detecting element according to claim 3 , wherein
the film thickness of the first magnetic layer is greater than or equal to 10 Å and less than or equal to 12.5 Å.
5. The magnetic detecting element according to claim 1 , wherein
the first magnetic layer is formed using Fe x Co 100-x (in this regard, however, the x is greater than or equal to 55 at % and less than or equal to 65 at %).
6. A magnetic sensor embedding therein no permanent magnet, wherein the magnetic detecting element according to claim 1 is disposed on a substrate.