Granted Patent B2

US 8,907,341 · App. 13/710,969 · Granted Dec 9, 2014

Abstract

Claims (40)

1. A thin-film semiconductor device, comprising:

a substrate;

a semiconductor device; and

a capacitor,

wherein the semiconductor and the capacitor are above the substrate and apart from each other,

the semiconductor device includes:

a first gate electrode comprising a light-transmitting conductive material above the substrate;

a second gate electrode comprising a light-shielding conductive material above the first gate electrode;

a first insulating layer above the second gate electrode;

a semiconductor layer above the first insulating layer;

a second insulating layer above the semiconductor layer; and

a source electrode and a drain electrode that are above the second insulating layer, the capacitor includes:

a first capacitor electrode comprising a light-transmitting conductive material above the substrate;

a dielectric layer comprising a same material as the first insulating layer, above the first capacitor electrode; and

a second capacitor electrode above the dielectric layer, comprising a conductive material same as at least one of the source electrode and the drain electrode, overlapping at least part of the first capacitor electrode in a top view, and

the second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.

2. The thin-film semiconductor device according to claim 1 ,

wherein the first gate electrode and the first capacitor electrode are continuously formed.

3. The thin-film semiconductor device according to claim 1 ,

wherein the semiconductor device further includes a pair of contact layers, each of which is between the second insulating layer and the source electrode or between the second insulating layer and the drain electrode, and is contacting a side surface of the semiconductor layer.

4. The thin-film semiconductor device according to claim 3 ,

wherein the capacitor further includes an intermediate layer comprising a same material as the contact layer and being between the dielectric layer and the second capacitor electrode.

5. The thin-film semiconductor device according to claim 1 ,

wherein the semiconductor layer includes a crystalline silicon thin film.

6. The thin-film semiconductor device according to claim 5 ,

wherein the semiconductor layer further includes an intrinsic non-crystalline silicon thin film above the crystalline silicon thin film.

7. The thin-film semiconductor device according to claim 6 ,

wherein the second gate electrode, the crystalline silicon thin film, the intrinsic non-crystalline silicon thin film, and the second insulating layer having outlines that are coincident with one another in the top view.

8. The thin-film semiconductor device according to claim 1 ,

wherein the second insulating layer comprises an organic material.

9. The thin-film semiconductor device according to claim 1 ,

wherein the first gate electrode and the first capacitor electrode comprise a same material.

10. The thin-film semiconductor device according to claim 1 ,

wherein the semiconductor layer includes a crystalline silicon thin film layer, and

the crystalline silicon thin film layer has an outline that is coincident with the outlines of the second gate electrode, the semiconductor layer, and the second insulating layer in the top view.

11. The thin-film semiconductor device according to claim 1 ,

wherein the semiconductor layer includes an intrinsic non-crystalline silicon thin film layer, and

the intrinsic non-crystalline silicon thin film layer has an outline that is coincident with the outlines of the second gate electrode, the semiconductor layer, and the second insulating layer in the top view.

12. The thin-film semiconductor device according to claim 1 ,

wherein an outermost periphery of each of the second gate electrode, the semiconductor layer, and the second insulating layer is aligned in a cross-sectional view.

Assignments (6)