Micro device stabilization post
A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.
1. A structure comprising:
a stabilization layer comprising an array of stabilization posts;
an array of micro chips on the array of stabilization posts;
wherein each micro chip includes bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface, each micro chip is on a plurality of stabilization posts, and each micro chip comprises a through hole extending completely through the micro chip and the through hole is not directly above a stabilization post.
2. The structure of claim 1 , wherein the array of stabilization posts are separated by a pitch of 1 μm to 100 μm.
3. The structure of claim 1 , wherein the array of stabilization posts are separated by a pitch of 1 μm to 10 μm.
4. The structure of claim 1 , wherein the stabilization layer is bonded to a carrier substrate.
5. The structure of claim 1 , wherein each micro chip has a maximum width of 1 to 100 μm.
6. The structure of claim 1 , further comprising an array of bottom conductive contacts on the bottom surfaces of the array of micro chips.
7. The structure of claim 6 , wherein each micro chip comprises a contact pad in electrical connection with one of the conductive contacts.
8. The structure of claim 1 , wherein the stabilization layer is formed of a thermoset material.
9. The structure of claim 8 , wherein the thermoset material comprises benzocyclobutene (BCB).
10. The structure of claim 1 , further comprising a sacrificial layer between the stabilization layer and the array of micro chips, wherein the array of stabilization posts extend through a thickness of the sacrificial layer.
11. The structure of claim 10 , wherein the sacrificial layer comprises an oxide or nitride.
12. The structure of claim 10 , further comprising an etch stop detection layer between the sacrificial layer and the array of micro chips, wherein the array of stabilization posts extend through a thickness of the etch stop detection layer.
13. The structure of claim 12 , wherein the etch stop detection layer comprises titanium.
14. The structure of claim 10 , further comprising an adhesion promoter layer between the stabilization layer and the sacrificial layer, wherein the array of stabilization posts extend through a thickness of the adhesion promoter layer.
15. The structure of claim 1 , wherein each micro chip includes a plurality of conductive contacts, and each conductive contact of the plurality of conductive contacts is on a corresponding stabilization post of the plurality of stabilization posts.
16. The structure of claim 15 , wherein each micro chip comprises a plurality of through holes extending completely through the micro chip and each through hole of the plurality of through holes is not directly above a stabilization post of the plurality of stabilization posts.
17. The structure of claim 16 , further comprising a sacrificial layer between the stabilization layer and the array of micro chips, wherein the array of stabilization posts extend through a thickness of the sacrificial layer.
18. The structure of claim 17 , wherein each through hole of the plurality of through holes exposes the sacrificial layer.
19. The structure of claim 17 , further comprising an etch stop detection layer between the sacrificial layer and the array of micro chips, wherein the array of stabilization posts extend through a thickness of the etch stop detection layer, wherein each through hole of the plurality of through holes exposes the etch stop detection layer.
20. The structure of claim 15 , wherein each conductive contact of the plurality of conductive contacts comprises a bonding layer formed of a noble metal.