IP Library Granted Patent US 9,316,742
Granted Patent B2
US 9,316,742 · App. 13/711,615 · Granted Apr 19, 2016

Ordering structure of scintillator and fabrication method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,316,742
App. No.
13/711,615
Granted
Apr 19, 2016
Kind
B2
Abstract

An ordering structure scintillator of scintillator and fabrication method is disclosed. The ordering structure scintillator of scintillator comprises: a tubular template, which consists of a plurality of thin film oxidized metal tubes; a plurality of scintillators, filled in the thin film oxidized metal tubes; and a package layer, formed on the surface of the tubular template for protecting the tubular template. In addition, through the fabrication method, the ordering structure scintillator of scintillator can be made by anodic treatment and die casting technology with low cost and rapid production; moreover, the film oxidized metal tubes of the tubular template can be further manufactured to nano tubes by adjusting electrolyte composition, electrolysis voltage, and processing time of anodic treatment, and the aperture size, the thickness and the vessel density of the nano tube can be controlled and ranged from 10 nm to 500 nm, 0.1 μm to 1000 μm, and 10 8 to 10 12 tube/cm 2 , respectively.

Claims (9)

1. A scintillator with sub-micron column structure, comprising:

an anodic metal oxide tubular template, having a plurality of thin film oxidized tubes;

a plurality of scintillators, being filled in the thin film oxidized tubes, wherein the material of the scintillators is selected from the group consisting of: cesium iodide (CsI), cesium iodide with doped sodium (CsI(Na)) and cesium iodide with doped thallium (CsI(Tl)); and

a package layer, being formed on the surface of the anodic metal oxide tubular template for protecting the scintillators from being damaged by water vapor and oxygen.

2. The scintillator with sub-micron column structure of claim 1 , further comprising a metal reflective layer formed on the inner walls of each of the thin film oxidized tube.

3. The scintillator with sub-micron column structure of claim 2 , wherein the material of the metal reflective layer is selected from the group consisting of: zirconium, titanium, iron, cobalt, aluminum, and alloy made of these materials.

4. The scintillator with sub-micron column structure of claim 1 , wherein the material of the thin film oxidized tube is selected from the group consisting of: ZrO 2 , TiO 2 , Al 2 O 3 , Ta 3 O 5 , ZrO 2 , and Nb 2 O 3 .

5. The scintillator with sub-micron column structure of claim 1 , wherein the material of the thin film oxidized tube has a specific tube diameter ranged from 10 nm to 500 nm, a specific thickness ranged from 5 μm to 1000 μm and a specific tube density ranged from 108 tube/cm 2 to 1012 tube/cm 2 .

6. The scintillator with sub-micron column structure of claim 1 , wherein the material of the package layer is selected from the group consisting of polymer, metal, ceramic, and combination thereof, and being formed on the surface of the tubular template by the processing way selected from the group consisting of spin coating, vapor deposition, sputtering, and combination process thereof

Assignments (2)
CHANGE OF NAME Recorded Apr 17, 2015
From: CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
To: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 035453/0240 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2012
From: CHEN, CHIEN-CHON; TSAI, DENG-HORNG; HUANG, KER-JER; CHEN, SOON-LIN; YANG, TSAN-NAN
To: CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 029571/0978 →