IP Library Granted Patent US 9,657,385
Granted Patent B2
US 9,657,385 · App. 13/712,086 · Granted May 23, 2017

Method of manufacturing thermochromic substrate

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,657,385
App. No.
13/712,086
Granted
May 23, 2017
Kind
B2
Abstract

A method of manufacturing a thermochromic substrate, with which transmittance can be increased. The method includes the steps of forming a first thin film as a coating on a base substrate, the refractive index of the first thin film being different from that of a VO 2 thin film; forming a pre-thermochromic thin film by coating the first thin film with pure vanadium; forming a second thin film as a coating on the pre-thermochromic thin film, the refractive index of the second thin film being different from that of a VO 2 thin film; and heat-treating a resultant stack that includes the base substrate, the first thin film, the pre-thermochromic thin film and the second thin film.

Claims (16)

1. A method of manufacturing a thermochromic substrate, comprising:

coating a base substrate with a first thin film;

coating the first thin film with a pre-thermochromic thin film, the pre-thermochromic thin film comprising a composition having a formula A x B z , where A is a metal, and B is oxygen,

and x and z are relative molar proportions of the metal A and of oxygen, respectively, wherein z can be zero or greater;

coating the pre-thermochromic thin film with a second thin film,

wherein each of the first thin film and the second thin film comprises at least one of a transparent oxide thin film or a transparent nitride thin film, the transparent oxide thin film or the transparent nitride thin film comprises at least one selected from the group consisting of silicon dioxide (SiO 2 ), niobium pentoxide (Nb 2 O 5 ), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), and silicon nitride (Si 3 N 4 ), and at least one of the first thin film and the second thin film comprises an oxide thin film; and

modifying the pre-thermochromic thin film into a thermochromic thin film having a formula A x B y , where x and y are relative molar proportions of the metal A and of oxygen, respectively, wherein a ratio of y to x in the formula for the thermochromic thin film is greater than a ratio of z to x in the formula for the pre-thermochromic thin film, the thermochromic thin film being one selected from the group consisting of vanadium dioxide (VO 2 ), titanium oxide (III) (Ti 2 O 3 ) and niobium oxide (NbO 2 ), by heat-treating a resultant stack that includes the base substrate, the first thin film, the pre-thermochromic thin film and the second thin film, wherein heat-treating the resultant stack makes oxygen diffuse from at least one of the first thin film and the second thin film into the pre-thermochromic thin film, so that the pre-thermochromic thin film is modified into the thermochromic thin film,

wherein each refractive index of the first thin film and the second thin film is different from that of the thermochromic thin film.

2. The method of claim 1 , wherein z is 0.

3. The method of claim 1 , wherein the pre-thermochromic thin film is formed by coating the first thin film with vanadium (V) while providing oxygen.

4. The method of claim 1 , wherein the pre-thermochromic thin film comprises pure vanadium, which is to be converted into vanadium dioxide (VO 2 ) by heat-treating the resultant stack.

5. The method of claim 1 , wherein each thickness of the first thin film, the pre-thermochromic thin film and the second thin film ranges from 30 nm to 80 nm.

6. The method of claim 1 , wherein heat-treating the resultant stack is performed in an argon (Ar) or vacuum atmosphere.

7. The method of claim 1 , wherein heat-treating the resultant stack is performed at a temperature ranging from 400° C. to 500° C.

8. The method of claim 7 , wherein heat-treating the resultant stack is performed for 20 to 120 minutes.

9. The method of claim 1 , wherein coating with the first thin film and coating with the second thin film are performed via reactive sputtering deposition.

Assignments (2)
CHANGE OF NAME Recorded Jan 16, 2015
From: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
To: CORNING PRECISION MATERIALS CO., LTD.
Reel/Frame 034774/0676 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2012
From: CHOI, YONG WON; JUNG, YUNG-JIN; KIM, HYUN BIN; BAE, SEULGI
To: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
Reel/Frame 029577/0814 →