Composition having dispersion of nano-particles therein and methods of fabricating same
View Patent ↗Compositions having a dispersion of nano-particles therein and methods of fabricating compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and discrete prepolymer molecules. A polymer matrix is formed from the discrete prepolymer molecules. The polymer matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including discrete prepolymer molecules. The medium is a liquid at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.
1. A method of applying a light-conversion layer to a surface of a light-emitting diode (LED), the method comprising:
forming a polymer matrix from a mixture of quantum dots and discrete prepolymer molecules, wherein the quantum dots are hetero-structure quantum dots having an outer insulator coating, and wherein the quantum dots each comprise a nano-crystalline core comprising a first semiconductor material, a nano-crystalline shell comprising a second, different, semiconductor material at least partially surrounding the nano-crystalline core, a nano-crystalline outer shell at least partially surrounding the nano-crystalline shell, the nano-crystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials, and a compositional transition layer disposed between, and in contact with, the nano-crystalline shell and the nano-crystalline outer shell, the compositional transition layer having a composition intermediate to the second and third semiconductor materials, the polymer matrix comprising a dispersion of the quantum dots therein; and
applying the polymer matrix to the surface of the LED.
2. The method of claim 1 , wherein applying the polymer matrix to the surface of the LED comprises using a technique selected from the group consisting of spraying, dip-coating, spin-coating, and drop-casting.
3. The method of claim 1 , wherein applying the polymer matrix to the surface of the LED further comprises curing the polymer matrix with ultra-violet (UV) light exposure or heating.
4. The method of claim 1 , wherein the discrete prepolymer molecules are cyclic monomers, and forming the polymer matrix comprises opening the cyclic monomers with an initiator species by adding the initiator species to the mixture.
5. The method of claim 1 , wherein the nano-crystalline core of each quantum dot is an anisotropic nano-crystalline core having an aspect ratio between, but not including, 1.0 and 2.0.
6. The method of claim 1 , wherein the outer insulator coating comprises a layer of material selected from the group consisting of silica (SiO x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ), alumina (AlO x ), and hafnia (HfO x ).
7. A method of applying a light-conversion layer to a surface of a light-emitting diode (LED), the method comprising:
applying a mixture of quantum dots and discrete prepolymer molecules to the surface of the LED, wherein the quantum dots are hetero-structure quantum dots having an outer insulator coating, and wherein the quantum dots each comprise a nano-crystalline core comprising a first semiconductor material, a nano-crystalline shell comprising a second, different, semiconductor material at least partially surrounding the nano-crystalline core, a nano-crystalline outer shell at least partially surrounding the nano-crystalline shell, the nano-crystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials, and a compositional transition layer disposed between, and in contact with, the nano-crystalline shell and the nano-crystalline outer shell, the compositional transition layer having a composition intermediate to the second and third semiconductor materials; and
forming, from the mixture, a polymer matrix on the surface of the LED, the polymer matrix comprising a dispersion of the quantum dots therein.
8. The method of claim 7 , wherein applying the mixture to the surface of the LED comprises using a technique selected from the group consisting of spraying, dip-coating, spin-coating, and drop-casting.
9. The method of claim 7 , wherein forming the polymer matrix on the surface of the LED further comprises curing the polymer matrix with ultra-violet (UV) light exposure or heating.
10. The method of claim 7 , wherein the discrete prepolymer molecules are cyclic monomers, and forming the polymer matrix comprises opening the cyclic monomers with an initiator species by adding the initiator species to the mixture.
11. The method of claim 7 , wherein the nano-crystalline core of each quantum dot is an anisotropic nano-crystalline core having an aspect ratio between, but not including, 1.0 and 2.0.
12. The method of claim 7 , wherein the outer insulator coating comprises a layer of material selected from the group consisting of silica (SiO x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ), alumina (AlO x ), and hafnia (HfO x ).
13. The method of claim 7 , wherein the mixture of quantum dots and discrete prepolymer molecules is applied to the surface of the LED prior to dicing the LED from a wafer comprising a plurality of LED dies.
14. A composition, comprising:
a medium comprising discrete prepolymer molecules, the medium a liquid at 25 degrees Celsius; and
a plurality of semiconductor nano-particles suspended in the medium, wherein the semiconductor nano-particles are quantum dots, wherein the quantum dots are hetero-structure quantum dots having an outer insulator coating, and wherein the quantum dots each comprise a nano-crystalline core comprising a first semiconductor material, a nano-crystalline shell comprising a second, different, semiconductor material at least partially surrounding the nano-crystalline core, a nano-crystalline outer shell at least partially surrounding the nano-crystalline shell, the nano-crystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials, and a compositional transition layer disposed between, and in contact with, the nano-crystalline shell and the nano-crystalline outer shell, the compositional transition layer having a composition intermediate to the second and third semiconductor materials.
15. The composition of claim 14 , wherein the discrete prepolymer molecules are cyclic monomers.
16. The composition of claim 15 , wherein the cyclic monomers are cyclic siloxane monomers of the formula —[Si(R)(R′)—O] n —, where n is 3, 4, 5 or 6, and where R or R′ is a ligand selected from the group consisting of H, Cl, an alkyl radical with 1-8 carbon atoms, a fluoroalkyl of 3-8 carbon atoms, allyl, vinyl, and combinations thereof.
17. The composition of claim 14 , wherein the medium further comprises a solvent selected from the group consisting of toluene, ethylbenzene, tetrahydrofuran, hexane, and cyclohexane.
18. The composition of claim 14 , wherein the medium is solvent-free.
19. The composition of claim 14 , wherein the nano-crystalline core of each quantum dot is an anisotropic nano-crystalline core having an aspect ratio between, but not including, 1.0 and 2.0.
20. The composition of claim 14 , wherein the outer insulator coating comprises a layer of material selected from the group consisting of silica (SiO x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ), alumina (ALO x ), and hafnia (HfO x ).