Solid-state image capture device, manufacturing method therefor, and electronic apparatus
View Patent ↗A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.
1. A solid-state image capture device comprising:
a photoelectric converter provided in an image capture area of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; and
an on-chip lens provided in the image capture area of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface,
wherein the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin, and wherein the solid-state image capture device does not include an antireflection layer in contact with the on-chip lens.
2. The solid-state image capture device according to claim 1 , wherein the on-chip lens contains hollow silica particles as the low-refractive-index particles.
3. The solid-state image capture device according to claim 1 , wherein the low-refractive-index particles have a refractive index of n=1.25 to 1.40.
4. The solid-state image capture device according to claim 3 , wherein the binder resin has a refractive-index of about n=1.60.
5. The solid-state image capture device according to claim 1 , wherein the on-chip lens is a single layer structure.
6. An electronic apparatus comprising:
a photoelectric converter provided in an image capture area of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; and
an on-chip lens provided in the image capture area of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface,
wherein the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin, and wherein the electronic apparatus does not include an antireflection layer in contact with the on-chip lens.
7. The electronic apparatus of claim 6 , wherein the on-chip lens contains hollow silica particles as the low-refractive-index particles.
8. The electronic apparatus of claim 6 , wherein the low-refractive-index particles have a refractive index of n=1.25 to 1.40.
9. The electronic apparatus of claim 8 , wherein the binder resin has a refractive-index of about n=1.60.
10. The electronic apparatus of claim 6 , wherein the low-refractive-index particles constitute from 10% to 50% of the on-chip lens by weight.
11. A manufacturing method for a solid-state image capture device, the method comprising the steps of:
providing a photoelectric converter at an image capture surface of a substrate, the photoelectric converter receiving incident light at a light-receiving surface of the photoelectric converter and photoelectrically converting the incident light to thereby generate signal charge; and
providing an on-chip lens above the light-receiving surface of the photoelectric converter, the on-chip lens focusing the incident light onto the light-receiving surface, wherein the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin, and wherein no antireflection layer is placed in contact with the on-chip lens.
12. The method of claim 11 , wherein the on-chip lens contains hollow silica particles as the low-refractive-index particles.
13. The method of claim 11 , wherein the low-refractive-index particles have a refractive index of n=1.25 to 1.40.
14. The method of claim 13 , wherein the binder resin has a refractive-index of about n=1.60.
15. A solid-state image capture device comprising:
a photoelectric converter provided in an image capture area of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; and
an on-chip lens provided in the image capture area of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface,
wherein the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin, and wherein the low-refractive-index particles constitute from 10% to 50% of the on-chip lens by weight.
16. The solid-state image capture device according to claim 15 , wherein the on-chip lens contains hollow silica particles as the low-refractive-index particles.
17. The solid-state image capture device according to claim 15 , wherein the solid-state image capture device does not include an antireflection layer in contact with the on-chip lens.
18. The solid-state image capture device according to claim 15 , wherein the low-refractive-index particles have a refractive index of n=1.25 to 1.40.
19. The solid-state image capture device according to claim 15 , wherein the binder resin has a refractive-index of about n=1.60.
20. A manufacturing method for a solid-state image capture device, the method comprising the steps of:
providing a photoelectric converter at an image capture surface of a substrate, the photoelectric converter receiving incident light at a light-receiving surface of the photoelectric converter and photoelectrically converting the incident light to thereby generate signal charge; and
providing an on-chip lens above the light-receiving surface of the photoelectric converter, the on-chip lens focusing the incident light onto the light-receiving surface, wherein the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin, and wherein the low-refractive-index particles constitute from 10% to 50% of the on-chip lens by weight.
21. The method of claim 20 , wherein the on-chip lens contains hollow silica particles as the low-refractive-index particles.
22. The method of claim 20 , wherein the solid-state image capture device does not include an antireflection layer in contact with the on-chip lens.
23. The method of claim 20 , wherein the low-refractive-index particles have a refractive index of n=1.25 to 1.40.
24. The method of claim 20 , wherein the binder resin has a refractive-index of about n=1.60.