Solid-state image device, manufacturing method thereof, and image capturing apparatus
View Patent ↗A solid-state image device is provided which includes: a photoelectric conversion portion which obtains a signal charge by photoelectric conversion of incident light; a pixel transistor portion which outputs a signal charge generated by the photoelectric conversion portion; a peripheral circuit portion which is provided at the periphery of a pixel portion including the photoelectric conversion portion and the pixel transistor portion and which has an NMOS transistor and a PMOS transistor; a first stress liner film which has a compressive stress and which is provided on the PMOS transistor; and a second stress liner film which has a tensile stress and which is provided on the NMOS transistor. In the solid-state image device described above, the photoelectric conversion portion, the pixel transistor portion, and the peripheral circuit portion are provided in and/or on a semiconductor substrate.
1. A solid-state image device comprising:
a photodiode configured to convert incident light into a signal charge, said photodiode being in a semiconductor substrate;
a first stress liner film, an internal stress of the first stress liner film being a compressive stress;
a second stress liner film, an internal stress of the second stress liner film being a tensile stress;
a transfer region of the semiconductor substrate between said photodiode and a floating diffusion, said first stress liner film being between said floating diffusion and said second stress liner film,
wherein said first stress liner film is a silicon nitride film, said second stress liner film being another silicon nitride film,
wherein a surface of the semiconductor substrate is between said first stress liner film and said photodiode.
2. The solid-state image device according to claim 1 , further comprising:
p-type source/drain regions in the semiconductor substrate, said surface of the semiconductor substrate being between said first stress liner film and said p-type source/drain regions.
3. The solid-state image device according to claim 2 , further comprising:
a PMOS transistor channel region of the semiconductor substrate between said p-type source/drain regions, a PMOS transistor gate insulating film being between a PMOS transistor gate electrode and said PMOS transistor channel region.
4. The solid-state image device according to claim 1 , wherein said first stress liner film is between said photodiode and said second stress liner film.
5. The solid-state image device according to claim 1 , wherein said floating diffusion is in said semiconductor substrate.
6. The solid-state image device according to claim 1 , further comprising:
a transfer transistor gate insulating film between a transfer transistor gate electrode and said transfer region.
7. The solid-state image device according to claim 1 , further comprising:
n-type source/drain regions in said semiconductor substrate, said surface of the semiconductor substrate being between said second stress liner film and said n-type source/drain regions.
8. The solid-state image device according to claim 7 , further comprising:
an NMOS transistor channel region of the semiconductor substrate between said n-type source/drain regions, an NMOS transistor gate insulating film being between an NMOS transistor gate electrode and said NMOS transistor channel region.
9. The solid-state image device according to claim 1 , wherein the following formula is satisfied:
( d 1 ×P 1)−( d 2 ×P 2)=|Δ p|< 300 MPa, with
“d 1 ” being the thickness of the first stress liner film,
“P 1 ” being said internal stress of the first stress liner film,
“d 2 ” being the thickness of the second stress liner film,
“P 2 ” being said internal stress of the second stress liner film.
10. An image capturing apparatus comprising:
an image capturing portion including the solid-state image device according to claim 1 ;
a light condensing optical portion configured to condense said incident light onto said image capturing portion.