METHOD FOR MOLECULAR ADHESION BONDING AT LOW PRESSURE
A three-dimensional composite structure that includes a wafer and layer of semiconductor crystalline material bonded thereto, with the layer including first and second series of microcomponents on the first and second faces respectively, with the microcomponents being in alignment such that any residual alignment offsets between the first and second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure.
1 . A three-dimensional composite structure comprising a wafer and a layer of semiconductor crystalline material bonded on the wafer by molecular adhesion, with the layer having a first face located in the vicinity of the bonding interface between the layer and the wafer and a second face opposite to the first face, wherein the layer of semiconductor crystalline material comprises a first series of microcomponents on its first face and a second series of microcomponents on its second face in alignment with the first series of microcomponents, wherein the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure.
2 . The three-dimensional composite structure according to claim 1 , wherein the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 50 nm over at least 50% of the surface of the structure.
3 . The three-dimensional composite structure according to claim 1 , having a diameter of at least 300 mm.
4 . The three-dimensional composite structure according to claim 1 , wherein at least some of the microcomponents are image sensors.
5 . The three-dimensional composite structure according to claim 1 , wherein at least the first series of microcomponents on the wafer are image sensors.
6 . The three-dimensional composite structure according to claim 1 , wherein the wafer is a monolayer structure.
7 . The three-dimensional composite structure according to claim 1 , wherein the wafer is a silicon-on-insulator structure.