Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels
A PV panel uses an array of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an uncured aluminum-containing layer, and the aluminum-containing layer is heated to anneal the aluminum-containing layer as well as p-dope the bottom surface of the spheres. A phosphorus-containing layer is deposited over the spheres to dope the top surface n-type, forming a pn junction. The phosphorus layer is then removed. A conductor is deposited to contact the top surface. Alternatively, the spheres are deposited with a p-type core and an n-type outer shell. After deposition, the top surface is etched to expose the core. A first conductor layer contacts the bottom surface, and a second conductor layer contacts the exposed core. A liquid lens material is deposited over the rounded top surface of the spheres and cured to provide conformal lenses designed to increase the PV panel efficiency.
1. A solar cell structure comprising:
one or more diodes on a substrate adapted to convert sunlight to electricity, the diodes having a first surface portion for being exposed to the sun, the diodes having an outer surface being formed of a first material having a first index of refraction;
a first lens layer overlying the first surface portion, the first lens layer comprising transparent first particles in a first binder material, the first particles having an average first diameter less than 300 nm, the first particles having a second index of refraction less than the first index of refraction, wherein the second index of refraction is greater than an index of refraction of the first binder material, such that an index of refraction of the first lens layer is less than the first index of refraction; and
a second lens layer overlying the first lens layer, the second lens layer comprising transparent second particles in a second binder material, the second particles having an average second diameter greater than 1 micron, the second particles having a third index of refraction less than the second index of refraction, the third index of refraction being substantially the same as the index of refraction of the second binder material, the second particles being harder than the second binder material to provide abrasion resistance and resistance to moisture.
2. The structure of claim 1 wherein the first particles have an average diameter between 50-300 nm.
3. The structure of claim 1 wherein the first particles have an index of refraction greater than or equal to 1.7.
4. The structure of claim 3 wherein the first particles are doped to have an index of refraction between 1.7-2.4.
5. The structure of claim 3 wherein the first particles are infused in a first polymer having an index of refraction less than 1.7.
6. The structure of claim 3 wherein the second particles have an index of refraction of less than or equal to 1.43.
7. The structure of claim 3 wherein the second particles are infused in a second polymer having an index of refraction approximately equal to the index of refraction of the second particles.
8. The structure of claim 1 wherein the second lens layer forms an approximately hemispherical lens.
9. The structure of claim 1 further comprising one or more additional lens layers having different indices of refraction to create a finer graded lens to further reduce reflection.
10. The structure of claim 1 wherein the first particles and the second particles are doped glass particles.
11. The structure of claim 1 further comprising a quantum dot layer deposited over the first surface portion, the quantum dot layer converting the sunlight's UV wavelengths to emitted visible wavelengths, wherein the one or more diodes convert the emitted visible wavelengths to electricity, wherein the first lens layer and the second lens layer are formed over the quantum dot layer.
12. The structure of claim 1 wherein the one or more diodes comprises a plurality of silicon spheres on a substrate, the diodes having a top surface of a first conductivity type and a bottom surface of a second conductivity type, the first lens layer and the second lens layer being deposited over the top surface of the diodes.
13. The structure of claim 1 wherein the first lens layer conforms to contours of the first surface portion of the diodes, and wherein the second lens layer conforms to a top surface of the first lens layer.
14. A method of forming a solar cell structure comprising:
depositing a plurality of silicon diodes on a substrate adapted to convert sunlight to electricity, the diodes having a first surface portion for being exposed to the sun, the diodes having an outer surface being formed of a first material having a first index of refraction;
depositing a first lens layer overlying the first surface portion, the first lens layer comprising transparent first particles in a first binder material, the first particles having an average first diameter less than 300 nm, the first particles having a second index of refraction less than the first index of refraction, wherein the second index of refraction is greater than an index of refraction of the first binder material, such that an index of refraction of the first lens layer is less than the first index of refraction; and
depositing a second lens layer overlying the first lens layer, the second lens layer comprising transparent second particles in a second binder material, the second particles having an average second diameter greater than 1 micron, the second particles having a third index of refraction less than the second index of refraction, the third index of refraction being substantially the same as the index of refraction of the second binder material, the second particles being harder than the second binder material to provide abrasion resistance and resistance to moisture.
15. The method of claim 14 wherein the first particles have an average diameter between 20-300 nm.
16. The method of claim 14 wherein the first particles have an index of refraction greater than or equal to 1.7.
17. The method of claim 14 wherein the first particles are doped to have an index of refraction of about 1.7-1.9.
18. The method of claim 14 wherein the first particles are infused in a first polymer having an index of refraction less than 1.7.
19. The method of claim 14 wherein the second particles have an index of refraction of less than or equal to 1.43.
20. The method of claim 14 wherein the second particles are infused in a second polymer having an index of refraction approximately equal to the index of refraction of the second particles.
21. The method of claim 14 wherein the second lens layer forms an approximately hemispherical lens.
22. The method of claim 14 wherein the first particles and the second particles are doped glass particles.
23. The method of claim 14 further comprising depositing a quantum dot layer over the first surface portion, the quantum dot layer converting the sunlight's UV wavelengths to emitted visible wavelengths, wherein the one or more diodes convert the emitted visible wavelengths to electricity, wherein the first lens layer and the second lens layer are formed over the quantum dot layer.