Half-heusler alloys with enhanced figure of merit and methods of making

1. A method of making a nanocomposite thermoelectric material comprising:

combining and arc melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material;

ball milling the alloy of the thermoelectric material into nanometer scale mean size particles; and

consolidating the nanometer size particles to form the thermoelectric material consisting of a half-Heusler material of a formula Hf 1+δ−x−y Zr x Ti y NiSn 1+δ−z Sb z , where 0≦x≦1.0, 0≦y≦1.0, 0≦z≦1.0, and −0.1≦δ<0.1 and grains having a mean grain size less than 300 nm.

2. The method of claim 1 , wherein consolidating the nanometer size particles comprises hot pressing the particles.

3. The method of claim 1 , further comprising:

annealing the consolidated thermoelectric material.

4. The method of claim 3 , wherein the thermoelectric material is annealed at a temperature between 700-800° C. in an inert gas.

5. The method of claim 4 , wherein the thermoelectric material is annealed for between about 12 and 24 hours.

6. The method of claim 1 , wherein the half-Heusler material consists of an n-type material and has a formula Hf 1−x Zr x NiSn 1−z Sb z , where 0.25≦x≦1.0 and 0.95≦1−z≦0.999.

7. The method of claim 6 , wherein the half-Heusler material has a formula Hf 1−x Zr x NiSn 1−z Sb z , where 0.5≦x<1.0 and 0.95≦1−z≦0.999.

8. The method of claim 7 , wherein the half-Heusler material has a formula Hf 1−x Zr x NiSn 1−z Sb z , where 0.5≦x≦0.85 and 0.95≦1−z≦0.999.

9. The method of claim 6 , wherein the half-Heusler material has a formula Hf 0.5 Zr 0.5 NiSn 0.99 Sb 0.01 .

10. The method of claim 6 , wherein a figure of merit, ZT, of the thermoelectric material is within 20% of the figure of merit, ZT, of a second thermoelectric material between 20-700° C., the second thermoelectric material having at least one of the same median grain size and the same mean grain size and having the formula Hf 0.75 Zr 0.25 NiSn 0.99 Sb 0.01 .

11. The method of claim 10 , wherein the thermoelectric material has a peak ZT value of 0.8 or more for at least one temperature in the range between about 500-700° C.

12. The method of claim 1 , wherein ball milling the alloy comprises ball milling the alloy of the thermoelectric material into particles having a mean particle size in a range of 5-100 nm.

13. The method of claim 12 , wherein consolidating the particles comprises consolidating the particles having the mean particle size in the range of 5-100 nm to form the thermoelectric material having a mean grain size in a range of 10 nm or more and less than 300 nm.

14. The method of claim 1 , wherein ball milling the alloy comprises ball milling the alloy of the thermoelectric material for 5-50 hours to produce the nanometer scale mean size particles.

15. The method of claim 1 , wherein the thermoelectric material consists of a single-phase half-Heusler material.

16. The method of claim 1 , wherein the thermoelectric material consists of an n-type half-Heusler material comprising Hf, Ti, Zr, Ni and at least one of Sn and Sb.

17. A method of making a nanocomposite thermoelectric material comprising:

combining and arc melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material;

ball milling the alloy of the thermoelectric material into nanometer scale mean size particles; and

consolidating the nanometer size particles to form the thermoelectric material consisting of a half-Heusler material of a formula Hf 1+δ−x−y Zr x Ti y CoSb 1+δ−z Sn z , where 0≦x≦1.0, 0≦y≦1.0, 0≦z≦1.0, and −0.1≦δ<0.1 and grains having a mean grain size less than 300 nm.

18. The method of claim 17 , wherein the half-Heusler material is a p-type material that consists of Ti, Zr, Hf, and Co and at least one of Sn and Sb.

19. The method of claim 18 , wherein the half-Heusler material has the formula Hf 1+δ−x−y Zr x Ti y CoSb 1+δ−x Sn z , where 0<x<1.0, 0<y<1.0, 0.15≦z≦0.25, and −0.1≦δ≦0.

20. The method of claim 19 , wherein the half-Heusler material has the formula Hf 1−x−y Zr x Ti y CoSb 1−z Sn z , where 0<x<1.0, 0<y<1.0, and 0.15≦z≦0.25.

21. The method of claim 20 , wherein the half-Heusler material has a lower Hf content than a Hf 0.8 Ti 0.2 CoSb 0.8 Sn 0.2 material and a figure of merit, ZT, that is higher than the figure of merit of Hf 0.5 Zr 0.5 CoSb 0.8 Sn 0.2 material for temperatures greater than 400° C. and having at least one of the same median grain size and the same mean grain size.

22. The method of claim 20 , wherein the half-Heusler material has a figure of merit, ZT, that is ≧0.8 for at least one temperature in the range 650-750° C.

23. The method of claim 20 , wherein the half-Heusler material has a figure of merit, ZT, that is ≧1.0 for at least one temperature in the range 750-850° C.

24. The method of claim 20 , wherein the half-Heusler material has the formula Hf 4/9 Zr 4/9 Ti 1/9 CoSb 0.8 Sn 0.2 .

25. The method of claim 17 , wherein ball milling the alloy comprises ball milling the alloy of the thermoelectric material into particles having a mean particle size in a range of 5-100 nm.

26. The method of claim 25 , wherein consolidating the particles comprises consolidating the particles having the mean particle size in the range of 5-100 nm to form the thermoelectric material having a mean grain size in a range of 10 nm or more and less than 300 nm.

27. The method of claim 17 , wherein ball milling the alloy comprises ball milling the alloy of the thermoelectric material for 5-50 hours to produce the nanometer scale mean size particles.

28. The method of claim 17 , wherein the thermoelectric material consists of a single-phase half-Heusler material.