Phase control thyristor with improved pattern of local emitter shorts dots
View Patent ↗A phase control thyristor includes a main gate structure and a plurality of local emitter shorts dots arranged in a shorts pattern on a cathode side of the thyristor. The main gate structure includes longitudinal main gate beams extending from a center region of the cathode side towards a circumferential region. Neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line. The shorts pattern is more homogeneous in a region closer to a main gate beam than in a region closer to an associated middle line. Adaptions to match shorts patterns in neighboring segments of the cathode side surface are made in regions away from the main gate beams such that an electron hole plasma spreading from the main gate beam is not interfered by any inhomogeneity of the shorts dots pattern. The design rules enable an improvement of the thyristor operational characteristics.
1. A phase control thyristor comprising:
a main gate structure on a cathode side of the thyristor;
a plurality of local emitter shorts dots arranged in a shorts pattern on the cathode side of the thyristor, wherein:
the main gate structure includes longitudinal main gate beams extending from a center region of a surface of the cathode side towards a circumferential region;
neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line;
the shorts pattern is more homogeneous in a region closer to a corresponding one of the main gate beams than in a region closer to the associated middle line; and
the density of the emitter shorts dots is smaller in the region closer to the corresponding one of the main gate beams and larger in the region closer to the associated middle line.
2. The phase control thyristor according to claim 1 , wherein the emitter short dots have a diameter between 30 to 500 μm.
3. The phase control thyristor according to claim 1 , wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
4. The phase control thyristor according to claim 1 , wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
5. The phase control thyristor according to claim 1 , wherein a number of dots is between 12 to 10000/cm 2 in the region closer to a main gate beam.
6. The phase control thyristor according to claim 1 , wherein a number of dots is between 40 to 30000/cm 2 in the region closer to the associated middle line.
7. The phase control thyristor according to claim 1 , wherein the shorts dots in the region closer to a main gate beam have substantially the same spacings.
8. The phase control thyristor according to claim 1 , wherein the shorts dots in the region closer to a main gate beam have substantially the same sizes.
9. The phase control thyristor according to claim 1 , wherein the shorts dots in the region closer to a main gate beam have at least one of larger spacings and smaller sizes than the shorts dots in the region closer to the associated middle line.
10. The phase control thyristor according to claim 1 , wherein neighboring main gate beams are arranged symmetrically with respect to the associated intermediate middle line.
11. The phase control thyristor according to claim 1 , wherein the main gate beams are tapered with a beam width reducing from the center region towards the circumferential region.
12. The phase control thyristor according to claim 11 , wherein the local width of the main gate beams is adapted to a local current density during regular thyristor operation.
13. The phase control thyristor according to claim 11 , wherein the beam width continuously reduces from the center region towards the circumferential region.
14. The phase control thyristor according to claim 1 , comprising:
a pilot thyristor on the cathode side, the pilot thyristor including a pilot gate structure comprising longitudinal pilot gate beams extending into a region of the main gate beams.
15. The phase control thyristor according to claim 2 , wherein the emitter short dots have a diameter between 50 and 400 μm.
16. The phase control thyristor according to claim 2 , wherein the emitter short dots have a diameter between 100 and 400 μm.
17. The phase control thyristor according to claim 4 , wherein the emitter short dots have a surface area of 10% up to 20% of the total area in the region closer to the associated middle line.
18. The phase control thyristor according to claim 5 , wherein the number of dots is between 100 to 3500/cm 2 in the region closer to the main gate beam.
19. The phase control thyristor according to claim 6 , wherein the number of dots is at least 200/cm 2 to 30000/cm 2 in the region closer to the associated middle line.
20. The phase control thyristor according to claim 2 , wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
21. The phase control thyristor according to claim 2 , wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
22. The phase control thyristor according to claim 3 , wherein a number of dots is between 12 to 10000/cm 2 in the region closer to a main gate beam.
23. The phase control thyristor according to claim 4 , wherein a number of dots is between 40 to 30000/cm 2 in the region closer to the associated middle line.