Light emitting device
A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.
1. A light emitting device comprising:
a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed;
a first electrode connected to the first conductive-type semiconductor layer; and
a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions,
wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions, and
wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.
2. The light emitting device according to claim 1 , wherein at least a portion of the first electrode is interposed between at least a portion of the open regions.
3. The light emitting device according to claim 1 , further comprising a light-transmissive insulating layer on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer.
4. The light emitting device according to claim 3 , wherein the light-transmissive insulating layer is exposed to correspond to the open regions of the light-transmissive conductive layer.
5. The light emitting device according to claim 1 , wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad.
6. The light emitting device according to claim 5 , wherein at least one region in which the light-transmissive conductive layer is connected between each of the two second branch electrodes and the second conductive-type semiconductor layer is disposed in regions excluding the open regions.
7. The light emitting device according to claim 6 , wherein the at least one region includes at least two regions for each of the two second branch electrodes in which the light-transmissive conductive layer is connected between the second branch electrode and the second conductive-type semiconductor layer are disposed.
8. The light emitting device according to claim 6 , wherein an area of the second branch electrode contacting the second conductive-type semiconductor layer is wider than an area of the second branch electrode connected to the light-transmissive conductive layer.
9. The light emitting device according to claim 6 , wherein the second branch electrode has a larger height in a connection region with the light-transmissive conductive layer than a height of the second branch electrode in a region contacting the second conductive-type semiconductor layer.
10. The light emitting device according to claim 6 , wherein regions in which the light-transmissive conductive layer is connected to one of the second branch electrodes correspond to regions in which the light-transmissive conductive layer is connected to another one of the second branch electrodes.
11. The light emitting device according to claim 10 , wherein the first electrode includes a first electrode pad and a first branch electrode branching from the first electrode pad and interposed between the two second branch electrodes.
12. The light emitting device according to claim 10 , wherein the first electrode includes at least one through electrode in electrical contact with the first conductive-type semiconductor layer, the through electrode being formed to extend through the light-transmissive insulating layer, the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer.
13. The light emitting device according to claim 12 , wherein the at least one region formed in a region excluding the open regions does not overlap with the through electrode.
14. The light emitting device according to claim 6 , wherein a height of the highest point of the second electrode pad is larger than a height of a surface of the light-transmissive insulating layer.
15. The light emitting device according to claim 1 , wherein the first electrode is in point contact with the first conductive-type semiconductor layer in a plurality of regions, the second electrode is in point contact with the light-transmissive conductive layer in regions excluding the plurality of open regions, and point contacting regions of the first conductive-type semiconductor layer and point contacting regions of the light-transmissive conductive layer are alternatively disposed.
16. The light emitting device according to claim 15 , further comprising a light-transmissive insulating layer on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer.
17. The light emitting device according to claim 16 , wherein the light-transmissive insulating layer is exposed to correspond to the open regions of the light-transmissive conductive layer.
18. The light emitting device according to claim 15 , wherein the first electrode includes a first electrode pad and a first branch electrode branching from the first electrode pad, the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad, and the first branch electrode is interposed between the two second branch electrodes.
19. A light emitting device comprising:
a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
a light-transmissive conductive layer disposed on the light emitting structure and having a first pattern comprising first open portions through which the light emitting structure is exposed and a bridge portion;
a light-transmissive insulating layer covering the light-transmissive conductive layer and having a second pattern including a second open portion formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer and the active layer so as to expose the first conductive-type semiconductor layer;
a first electrode contacting the first conductive-type semiconductor layer through the second open portion and disposed so as to extend on the light-transmissive insulating layer; and
a second electrode disposed on a region corresponding to an interior of the first pattern and extending to contact the bridge portion,
wherein the light-transmissive conductive layer is disposed between the light-transmissive insulating layer and the second conductive-type semiconductor layer; and
wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.