IP Library Granted Patent US 8,692,563
Granted Patent B1
US 8,692,563 · App. 13/720,861 · Granted Apr 8, 2014

Methods and circuits for measuring mutual and self capacitance

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Quick Facts
Patent No.
US 8,692,563
App. No.
13/720,861
Granted
Apr 8, 2014
Kind
B1
Abstract

In an example embodiment, an apparatus includes a sensing device. The sensing device includes circuitry configured to sense self-capacitance and circuitry configured to sense mutual-capacitance, each configured to detect capacitance values corresponding to whether an object is proximate to a touch screen. The sensing device is configured to measure a first capacitance value using the self-capacitance circuitry during self-capacitance sensing operations and to measure a second capacitance value using the mutual-capacitance circuitry during mutual-capacitance sensing operations.

Claims (45)

1. An apparatus comprising:

a capacitive sensor comprising a first electrode and a second electrode, wherein the first electrode is configured to have a first self-capacitance and the second electrode is configured to have a second self-capacitance, and wherein the first electrode and the second electrode are configured to have mutual capacitance between them;

a sensing device including circuitry configured to sense self-capacitance and circuitry configured to sense mutual-capacitance, each configured to detect capacitance values corresponding to whether an object is proximate to a touch screen, wherein the sensing device is configured to measure a first capacitance value from the capacitive sensor using the self-capacitance circuitry during self-capacitance sensing operations and to measure a second capacitance value from the capacitive sensor using the mutual-capacitance circuitry during mutual-capacitance sensing operations;

wherein the first capacitance value measured during the self-capacitance sensing operations corresponds to the first self-capacitance of the first electrode, and wherein the second capacitance value measured during the mutual-capacitance sensing operations corresponds to the mutual capacitance between the first electrode and the second electrode; and

wherein, during the self-capacitance sensing operations, the sensing device is configured to set voltages on the first electrode and the second electrode to a same voltage level.

2. The apparatus of claim 1 , wherein the sensing device further includes a switching system that is configured to switch to the self-capacitance circuitry to measure the first capacitance value during the self-capacitance sensing operations and to switch to the mutual-capacitance circuitry to measure the second capacitance value during the mutual-capacitance sensing operations.

3. The apparatus of claim 1 , wherein the first self-capacitance between the first electrode and a fixed voltage corresponds to the first capacitance value.

4. The apparatus of claim 1 , wherein the sensing device further comprises a measurement circuit that is coupled to the self-capacitance circuitry and to the mutual-capacitance circuitry, wherein the measurement circuit is configured to measure the first capacitance value during the self-capacitance sensing operations and to measure the second capacitance value during the mutual-capacitance sensing operations.

5. The apparatus of claim 1 , wherein, during mutual-capacitance sensing operations, the sensing device is configured to alternate a voltage level on the first electrode and keep a voltage level on the second electrode constant.

6. The apparatus of claim 1 , wherein the sensing device further comprises:

a voltage source configured to output a voltage for use during capacitive sensing operations; and

a switching system configured to selectively couple the voltage to the self-capacitance circuitry or the mutual-capacitance circuitry during capacitance sensing operations.

7. The apparatus of claim 1 , wherein the sensing device is configured to independently measure the first capacitance value using the self-capacitance circuitry and the second capacitance value using the mutual-capacitance circuitry.

8. The apparatus of claim 1 , wherein the sensing device further comprises an integration capacitor coupled to the first electrode, wherein the integration capacitor is used to measure the first self-capacitance of the first electrode.

9. The apparatus of claim 8 , wherein the integration capacitor is coupled to a fixed potential net during the mutual-capacitance sensing operations.

10. The apparatus of claim 1 , wherein the sensing device is configured to set voltages on the first electrode and the second electrode to the same voltage level during a same stage of the self-capacitance sensing operations.

11. A method comprising:

selecting a type of capacitance sensing operation to perform with a sensing device that includes a self-capacitance circuitry and a mutual-capacitance circuitry;

wherein the sensing device is coupled to a capacitive sensor comprising a first electrode and a second electrode, wherein the first electrode is configured to have a first self-capacitance and the second electrode is configured to have a second self-capacitance, and wherein the first electrode and the second electrode are configured to have mutual capacitance between them;

performing a self-capacitance sensing operation to measure a first capacitance value from the capacitive sensor using the self-capacitance circuitry and performing a mutual-capacitance sensing operation to measure a second capacitance value from the capacitive sensor using the mutual-capacitance circuitry;

wherein the first capacitance value measured during the self-capacitance sensing operation corresponds to the first self-capacitance of the first electrode, and wherein the second capacitance value measured during the mutual-capacitance sensing operation corresponds to the mutual capacitance between the first electrode and the second electrode; and

wherein, during the self-capacitance sensing operation, the sensing device is configured to set voltages on the first electrode and the second electrode to a same voltage level.

12. The method of claim 11 , wherein each of the first capacitance value and the second capacitance value corresponds to whether an object is proximate to a touch screen.

13. The method of claim 11 , further comprising independently measuring the first capacitance value using the self-capacitance circuitry and measuring the second capacitance value using the mutual-capacitance circuitry.

14. The method of claim 11 , wherein measuring the first capacitance value using the self-capacitance circuitry is performed when the selected type of capacitance sensing operation is the self-capacitance sensing operation.

15. The method of claim 11 , wherein measuring the second capacitance value using the mutual-capacitance circuitry is performed when the selected type of capacitance sensing operation is the mutual-capacitance sensing operation.

16. The method of claim 11 , further comprising dynamically switching between performing the self-capacitance sensing operation to measure the first capacitance value using the self-capacitance circuitry and performing the mutual-capacitance sensing operation to measure the second capacitance value using the mutual-capacitance circuitry.

17. The method of claim 11 , wherein performing the self-capacitance sensing operation and performing the mutual-capacitance sensing operation comprise using a measurement circuit to measure the first capacitance value during the self-capacitance sensing operation and to measure the second capacitance value during the mutual-capacitance sensing operation.

18. The method of claim 11 , wherein performing the self-capacitance sensing operation comprises coupling an integration capacitor to the first electrode.

19. The method of claim 18 , wherein performing the mutual-capacitance sensing operation comprises coupling the integration capacitor to a fixed potential net.

20. The method of claim 11 , wherein the sensing device is configured to set voltages on the first electrode and the second electrode to the same voltage level during a same stage of the self-capacitance sensing operation.

21. A device comprising:

a capacitive sensor comprising a first electrode and a second electrode, wherein the first electrode is configured to have a first self-capacitance and the second electrode is configured to have a second self-capacitance, and wherein the first electrode and the second electrode are configured to have mutual capacitance between them;

a sensing device configured to detect capacitance values corresponding to whether an object is proximate to a touch screen, wherein the sensing device is configured to selectively switch between performing self-capacitance sensing operations to measure a first capacitance value from the capacitive sensor and performing mutual-capacitance sensing operations to measure a second capacitance value from the capacitive sensor;

wherein the first capacitance value measured during the self-capacitance sensing operations corresponds to the first self-capacitance of the first electrode, and wherein the second capacitance value measured during the mutual-capacitance sensing operations corresponds to the mutual capacitance between the first electrode and the second electrode; and

wherein, during the self-capacitance sensing operations, the sensing device is configured to set voltages on the first electrode and the second electrode to a same voltage level.

22. The device of claim 21 , wherein the sensing device is configured to measure the first capacitance value corresponding to the first self-capacitance between the first electrode and a fixed voltage during self-capacitance sensing operations.

23. The device of claim 21 , wherein, during the mutual-capacitance sensing operations, the sensing device is configured to alternate a voltage level on the first electrode and keep a voltage level on the second electrode constant.

24. The device of claim 21 , wherein the sensing device is configured to dynamically switch between measuring the first capacitance value in self-capacitance sensing operations and measuring the second capacitance value in mutual-capacitance sensing operations.

25. The device of claim 21 , wherein the sensing device is configured to independently measure the first capacitance value using self-capacitance circuitry and the second capacitance value using mutual-capacitance circuitry.

26. The device of claim 21 , wherein the sensing device further includes a switching system that is configured to switch to a self-capacitance circuitry to measure the first capacitance value during the self-capacitance sensing operations and to switch to a mutual-capacitance circuitry to measure the second capacitance value during the mutual-capacitance sensing operations.

27. The device of claim 21 , wherein the sensing device further comprises a measurement circuit that is coupled to a self-capacitance circuitry and to a mutual-capacitance circuitry, wherein the measurement circuit is configured to measure the first capacitance value during the self-capacitance sensing operations and to measure the second capacitance value during the mutual-capacitance sensing operations.

28. The device of claim 21 , wherein the sensing device further comprises an integration capacitor coupled to the first electrode, wherein the integration capacitor is used to measure the first self-capacitance of the first electrode.

29. The device of claim 28 , wherein the integration capacitor is coupled to a fixed potential net during the mutual-capacitance sensing operations.

30. The device of claim 21 , wherein the sensing device is configured to set voltages on the first electrode and the second electrode to the same voltage level during a same stage of the self-capacitance sensing operations.

Assignments (6)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION
To: PARADE TECHNOLOGIES, LTD.
Reel/Frame 036508/0284 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS AND TRADEMARKS Recorded Aug 4, 2015
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT FOR THE SECURED PARTIES
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036264/0114 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
PATENT SECURITY AGREEMENT Recorded Nov 14, 2013
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 031636/0105 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2012
From: MAHARYTA, ANDRIY
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 029509/0183 →