Solid-state imaging device

1. A solid-state imaging device, comprising:

a plurality of pixels arranged in rows and columns above a semiconductor substrate;

a row scanning unit configured to generate a row reset signal; and

an inverting amplifier formed for each column,

wherein each of the pixels has a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit,

the photoelectric conversion unit has

a photoelectric conversion film which performs photoelectric conversion,

a pixel electrode formed on a surface of the photoelectric conversion film that faces the semiconductor substrate, and

a transparent electrode formed on a surface of the photoelectric conversion film that is opposite to the pixel electrode,

the amplification transistor has a gate connected to the pixel electrode, and outputs a signal voltage according to a potential of the pixel electrode to a column signal line via the selection transistor,

the row scanning unit is configured to supply the row reset signal to a gate of the reset transistor, and

an amplitude of the row reset signal is smaller than at least one of

(a) a maximum voltage applied to a drain of the amplification transistor,

(b) a maximum voltage applied to a gate of the selection transistor,

(c) a power source voltage applied to the inverting amplifier, and

(d) a maximum voltage applied to the transparent electrode.

2. The solid-state imaging device according to claim 1 , further comprising:

a column signal line formed for each column; and

a feedback line which is provided for each column and feeds back an output signal of the inverting amplifier to the pixels of a corresponding column,

wherein the inverting amplifier is connected to the column signal line, and

one of a source and a drain of the reset transistor is connected to the pixel electrode, and the other of a source and a drain of the reset transistor is connected to a corresponding feedback line.

3. The solid-state imaging device according to claim 2 ,

wherein the row scanning unit is further configured to receive an input of a row reset signal having a waveform that is unadjusted and an amplitude equivalent to a power source voltage, and to adjust a waveform of the row reset signal to reduce the amplitude of the row reset signal.

4. The solid-state imaging device according to claim 2 ,

wherein an amplitude of the row reset signal applied to the gate of the reset transistor is smaller than the maximum voltage applied to the drain of the amplification transistor.

5. The solid-state imaging device according to claim 2 ,

wherein an amplitude of the row reset signal applied to the gate of the reset transistor is smaller than the maximum voltage applied to the gate of the selection transistor.

6. The solid-state imaging device according to claim 2 ,

wherein an amplitude of the row reset signal applied to the gate of the reset transistor is smaller than the power source voltage applied to the inverting amplifier.

7. The solid-state imaging device according to claim 2 ,

wherein an amplitude of the row reset signal applied to the gate of the reset transistor is smaller than the maximum voltage applied to the transparent electrode.

8. The solid-state imaging device according to claim 2 ,

wherein the amplitude of the row reset signal applied to the gate of the reset transistor is smaller than any one of

(a) the maximum voltage applied to the drain of the amplification transistor,

(b) the maximum voltage applied to the gate of the selection transistor,

(c) the power source voltage applied to the inverting amplifier, and

(d) the maximum voltage applied to the transparent electrode.

9. The solid-state imaging device according to claim 1 , further comprising

a waveform adjusting unit configured to adjust a waveform of a row reset signal to be applied to the gate of the reset transistor,

wherein the waveform adjusting unit is configured to adjust the waveform, so that a trailing edge of a reset pulse included in the row reset signal is inclined, and to supply the adjusted reset pulse to the gate of the reset transistor.

10. The solid-state imaging device according to claim 9 ,

wherein the solid-state imaging device has switchable functions of capturing an image at a first frame rate and capturing an image at a second frame rate higher than the first frame rate, and

the waveform adjusting unit is configured to adjust an inclination of the trailing edge, so that a transition time required for falling or rising of the trailing edge of the reset pulse in the capturing at the first frame rate is longer than a transition time required for falling or rising of the trailing edge of the reset pulse in the capturing at the second frame rate.

11. The solid-state imaging device according to claim 9 ,

wherein the waveform adjusting unit is a filter circuit which is installed in a reset control line connected to the gate of the reset transistor.

12. The solid-state imaging device according to claim 11 ,

wherein the waveform adjusting unit is configured to adjust an inclination of the trailing edge of the reset pulse by changing a circuit constant of the filter circuit.

13. The solid-state imaging device according to claim 9 ,

wherein the waveform adjusting unit includes a digital-analog converter which outputs an analog signal as the row reset signal, the analog signal having an inclination at the trailing edge of the reset pulse.

14. The solid-state imaging device according to claim 9 , further comprising

a waveform adjusting unit configured to adjust a waveform of a row reset signal to be applied to the gate of the reset transistor,

wherein the waveform adjusting unit is configured to adjust a frequency band included in the trailing edge of the reset pulse in the row reset signal.

15. A driving method for a solid-state imaging device including:

a plurality of pixels arranged in rows and columns on a semiconductor substrate;

a row scanning unit configured to generate a row reset signal; and

an inverting amplifier formed for each column,

wherein each of the pixels has a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit,

the photoelectric conversion unit has

a photoelectric conversion film which performs photoelectric conversion,

a pixel electrode formed on a surface of the photoelectric conversion film that faces the semiconductor substrate, and

a transparent electrode formed on a surface of the photoelectric conversion film that is opposite to the pixel electrode, and

the amplification transistor has a gate connected to the pixel electrode, and outputs a signal voltage according to a potential of the pixel electrode to the column signal line via the selection transistor,

the driving method comprising:

outputting the output signal of the amplification transistor to the column signal line by enabling a row selection signal to the gate of the selection transistor; and

supplying the row reset signal, to a gate of the reset transistor, the row reset signal having an amplitude smaller than at least one of

(a) a maximum voltage applied to a drain of the amplification transistor,

(b) a maximum voltage applied to the gate of the selection transistor,

(c) a power source voltage applied to the inverting amplifier, and

(d) a maximum voltage applied to the transparent electrode.