IP Library Granted Patent US 9,263,601
Granted Patent B2
US 9,263,601 · App. 13/723,901 · Granted Feb 16, 2016

Enhanced adhesion of seed layer for solar cell conductive contact

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,263,601
App. No.
13/723,901
Granted
Feb 16, 2016
Kind
B2
Abstract

Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Claims (21)

1. A solar cell, comprising:

a substrate;

an N-type emitter region disposed above the substrate; and

a conductive contact disposed on and electrically connected to the N-type emitter region, the conductive contact comprising a mixture of a metal paste portion and a P-type silicon portion, the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type emitter region.

2. The solar cell of claim 1 , wherein the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

3. The solar cell of claim 1 , wherein the mixture has a thickness of approximately 2-10 microns, and wherein the conductive contact is a back contact of the solar cell comprising the mixture, an electroless plated nickel (Ni) layer disposed on the mixture, and an electroplated copper (Cu) layer disposed on the Ni layer.

4. A solar cell, comprising:

a substrate having an N-type diffusion region at or near a surface of the substrate; and

a conductive contact disposed above and electrically connected to the N-type diffusion region, the conductive contact comprising a mixture of a metal paste portion and a P-type silicon portion, the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type diffusion region.

5. The solar cell of claim 4 , wherein the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

6. The solar cell of claim 4 , wherein the mixture has a thickness of approximately 2-10 microns, and wherein the conductive contact is a back contact of the solar cell comprising the mixture, an electroless plated nickel (Ni) layer disposed on the mixture, and an electroplated copper (Cu) layer disposed on the Ni layer.

7. A method of fabricating solar cell, the method comprising:

forming an adhesion layer above an N-type emitter region of a substrate;

wherein the adhesion layer comprises P-type silicon; and

subsequent to forming the adhesion layer above the N-type emitter region, forming a metal seed paste layer on the adhesion layer;

annealing the metal seed paste layer and the adhesion layer to form a conductive mixture layer in contact with the N-type emitter region of the substrate;

wherein the metal paste portion and the P-type silicon portion of the mixture in contact with the N-type emitter region; and

forming a conductive contact for the solar cell from the conductive layer.

8. The method of claim 7 , wherein annealing the metal seed paste layer and the adhesion layer comprises mixing the metal seed paste layer and the adhesion layer to form the conductive layer.

9. The method of claim 7 , wherein forming the metal paste portion comprises aluminum (Al), and the mixture comprises an Al-Si alloy.

10. The method of claim 7 , wherein the conductive layer has a thickness of approximately 2-10 microns, and wherein forming the conductive contact comprises forming a back contact of the solar cell comprising the conductive layer, an electroless plated nickel (Ni) layer formed on the conductive layer, and an electroplated copper (Cu) layer formed on the Ni layer.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2025
From: TOTALENERGIES SE; TOTALENERGIES SOLAR INTL
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 072514/0911 →
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062699/0875 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2015
From: WU, JUNBO; JOHNSON, MICHAEL C.; CUDZINOVIC, MICHAEL; BEHNKE, JOSEPH; ZHU, XI; SMITH, DAVID D.; SEWELL, RICHARD HAMILTON; TU, XIUWEN; RIM, SEUNG BUM
To: SUNPOWER CORPORATION
Reel/Frame 035120/0224 →