Hybrid optical modulator for photonic integrated circuit devices
View Patent ↗An apparatus comprising an optical modulator, wherein the optical modulator comprises a planar substrate, a first III-V semiconductor layer on the substrate, and a silicon layer on the substrate. The optical modulator includes a planar semiconductor optical waveguide having a hybrid optical core, the hybrid optical core including vertically adjacent lateral portions of the first III-V semiconductor layer and the silicon layer.
1. An apparatus, comprising:
an optical modulator, wherein the optical modulator comprises:
a planar substrate;
a III-V semiconductor layer on the substrate;
a silicon layer on the substrate;
a first metallic electrical contact in physical contact with the III-V semiconductor layer;
a second metallic electrical contact in physical contact with the silicon layer; and
wherein the optical modulator includes a planar semiconductor optical waveguide having a hybrid optical core, the hybrid optical core including vertically overlapping and adjacent lateral portions of the first III-V semiconductor layer and the silicon layer; and
wherein the first and second metallic electrical contacts are laterally offset from the vertically overlapping portions of the layers.
2. The apparatus of claim 1 , wherein a lower portion of the III-V semiconductor layer is in physical contact with an upper portion of the silicon layer.
3. The apparatus of claim 1 ,
wherein the first and second metallic contacts are able to apply a voltage across the hybrid optical core such that an optical refractive index of the hybrid optical core is changed.
4. The apparatus of claim 1 ,
wherein the first and second metallic electrical contacts are able to apply a voltage across the hybrid optical core such that an optical attenuation of the hybrid optical core is changed.
5. The apparatus of claim 1 , further including a second III-V semiconductor layer adjacent to the III-V semiconductor layer, wherein the hybrid optical core includes vertically adjacent lateral portions of the first III-V semiconductor layer and the second III-V semiconductor layer, and the silicon layer.
6. The apparatus of claim 1 , wherein the III-V semiconductor layer is part of a stack of III-V semiconductor layers, each layer of the stack having a different III-V semiconductor alloy composition.
7. The apparatus of claim 1 , further including an insulating layer located adjacent to the III-V semiconductor layer and the silicon layer.
8. A method, comprising:
forming an optical modulator, including:
forming a planar substrate;
forming a III-V semiconductor layer on the substrate;
forming a silicon layer on the substrate;
forming a first metallic electrical contact in physical contact with the III-V semiconductor layer; and
forming a second metallic electrical contact in physical contact with the silicon layer; and
wherein the optical modulator includes a planar semiconductor optical waveguide having a hybrid optical core, the hybrid optical core including vertically overlapping and lateral portions of the first III-V semiconductor layer and the silicon layer;
wherein the first and second metallic electrical contacts are laterally offset from the vertically overlapping portions of the layers.
9. The method of claim 8 , wherein a lower portion of the III-V semiconductor layer is in physical contact with an upper portion of the silicon layer.
10. The method of claim 8 ,
wherein the first and second metallic contacts are able to apply a voltage across the hybrid optical core such that an optical refractive index of the hybrid optical core is changed.
11. The method of claim 8 ,
wherein the first and second metallic electrical contacts are able to apply a voltage across the hybrid optical core such that an optical attenuation of the hybrid optical core is changed.
12. The method of claim 8 , further including:
forming a second III-V semiconductor layer adjacent to the first III-V semiconductor layer, wherein the hybrid optical core includes vertically adjacent lateral portions of the first III-V semiconductor layer and second III-V semiconductor layers, and the silicon layer.
13. The method of claim 8 , wherein
the semiconductor layer is part of a stack of III-V semiconductor layers, each layer of the stack having a different III-V semiconductor alloy composition.
14. The method of claim 8 , further including:
forming an insulating layer located adjacent to the III-V semiconductor layer and the silicon layer.