INTERFEROMETRIC LIGHT ABSORBING STRUCTURE FOR DISPLAY APPARATUS
This disclosure provides systems, methods and apparatus related to light absorbing structures. In one aspect, a light absorbing structure has a metal layer and a semiconductor layer in contact with the metal layer. Each layer has a thickness up to about 50 nm. The metal layer can include at least one of titanium (Ti), molybdenum (Mo), and aluminum (Al). The semiconductor layer can include a layer of amorphous silicon (a-Si). The light absorbing structure can be included in a display apparatus having a substrate supporting an array of display elements. The light absorbing structure can include a dielectric layer in contact with the metal layer and a thick metal layer in contact with the semiconductor layer. In another aspect, a light absorbing structure has a metal layer and an ITO layer in contact with the metal layer. The thickness of the ITO layer can be less than about 100 nm.
1 . An apparatus comprising:
a light absorbing structure including:
a metal layer; and
a semiconductor layer in contact with the metal layer, wherein each of the metal layer and the semiconductor layer has a thickness less than or equal to about 50 nm.
2 . The apparatus of claim 1 , wherein a reflectance of the light absorbing structure across at least a portion of the visible spectrum and across a range of incidence angles of about 45° about an axis normal to the light absorbing structure is less than about 15%.
3 . The apparatus of claim 1 , wherein the metal layer includes at least one of titanium (Ti), molybdenum (Mo), a Mo-containing alloy, and aluminum (Al).
4 . The apparatus of claim 1 , wherein the semiconductor layer includes at least one of silicon (Si), amorphous silicon (a-Si) and germanium (Ge).
5 . The apparatus of claim 1 , wherein the metal layer is configured to absorb light corresponding to a primary color, and the semiconductor layer is configured to absorb light corresponding to a different primary color.
6 . The apparatus of claim 1 , wherein the light absorbing structure further comprises a dielectric layer in contact with the metal layer.
7 . The apparatus of claim 1 , wherein the light absorbing structure further comprises a second metal layer in contact with the semiconductor layer, wherein the second metal has a thickness greater than the metal layer.
8 . The apparatus of claim 1 , wherein a first semiconductor surface of the semiconductor layer is in contact with the first metal surface of the metal layer, and wherein the light absorbing structure further comprises:
a dielectric layer in contact with a second metal surface of the metal layer opposite the first metal surface; and
a second metal layer in contact with a second semiconductor surface of the semiconductor layer opposite the first semiconductor surface, wherein the second metal has a thickness greater than the metal layer.
9 . The apparatus of claim 8 , wherein the second metal layer includes at least one of Ti, Mo, a Mo-containing alloy, and Al and the dielectric layer includes at least one of silicon nitride (SiN x ) and indium tin oxide (ITO).
10 . The apparatus of claim 1 , wherein at least one of the metal layer and the semiconductor layer has a thickness less than or equal to about 25 nm.
11 . The apparatus of claim 1 , further comprising:
a display including an array of display elements;
a processor that is configured to communicate with the display, the processor being configured to process image data; and
a memory device that is configured to communicate with the processor.
12 . The apparatus of claim 11 , further comprising:
a driver circuit configured to send at least one signal to the display; and wherein
the controller further configured to send at least a portion of the image data to the driver circuit.
13 . The apparatus of claim 11 , further comprising:
an image source module configured to send the image data to the processor, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.
14 . The apparatus of claim 11 , further comprising:
an input device configured to receive input data and to communicate the input data to the processor.
15 . The apparatus of claim 11 , wherein the display elements include electromechanical system (EMS) display elements.
16 . The apparatus of claim 11 , further comprising:
a first substrate configured to support the array of display elements; and
a second substrate separated from the first substrate.
17 . The apparatus of claim 11 , wherein at least one of the first substrate, the second substrate and the display elements comprises the light absorbing structure.
18 . A method of manufacturing a light absorbing structure, comprising:
depositing, on a substrate, one of a metal layer and a semiconductor layer of a thickness of less than about 50 nm; and
depositing directly on top of the one of the metal layer and the semiconductor layer, a second layer of a thickness of less than about 50 nm, the second layer corresponding to another of the metal layer and the semiconductor layer.
19 . The method of claim 18 , wherein a reflectance of the light absorbing structure across at least a portion of the visible spectrum and across a 45° range of incidence angles is up to about 15%.
20 . The method of claim 18 , wherein the metal layer includes at least one of titanium (Ti), molybdenum (Mo), a Mo-containing alloy, and aluminum (Al).
21 . The method of claim 18 , wherein the semiconductor layer includes at least one of silicon (Si), amorphous silicon (a-Si) and germanium (Ge).
22 . The method of claim 18 , wherein the metal layer is configured to absorb light corresponding to a primary color, and the semiconductor layer is configured to absorb light corresponding to a different primary color.
23 . The method of claim 18 , further comprising depositing a dielectric layer.
24 . The method of claim 18 , further comprising depositing a second metal layer having a thickness of greater than about 100 nm.
25 . An apparatus comprising:
a light absorbing structure including:
a metal layer having a thickness less than or equal to about 50 nm; and
a second layer in contact with the metal layer, the second layer including one of an indium tin oxide (ITO) layer having a thickness less than or equal to about 100 nm and a high refractive index dielectric layer having a thickness less than or equal to about 200 nm, wherein a refractive index of the high refractive index dielectric layer is greater than or equal to about 1.7.
26 . The apparatus of claim 25 , wherein a reflectance of the light absorbing structure across at least a portion of the visible spectrum and across a range of incidence angles of about 45° about an axis normal to the light absorbing structure is less than about 15%.
27 . The apparatus of claim 25 , wherein the metal layer includes at least one of titanium (Ti), molybdenum (Mo), a Mo-containing alloy, and aluminum (Al).
28 . The apparatus of claim 25 , wherein the second layer includes the ITO layer having a thickness less than or equal to about 70 nm.
29 . The apparatus of claim 25 , wherein the second layer includes at least one of silicon nitride (SiN x ) and titanium oxide (TiO 2 ).
30 . The apparatus of claim 25 , wherein the light absorbing structure further comprises a second metal layer in contact with the second layer, wherein the second metal has a thickness greater than the metal layer.
31 . The apparatus of claim 25 , wherein a first surface of the second layer is in contact with the first metal surface of the metal layer, and wherein the light absorbing structure further comprises:
a dielectric layer in contact with a second metal surface of the metal layer opposite the first metal surface; and
a second metal layer in contact with a second surface of the second layer opposite the first surface, wherein the second metal has a thickness greater than the metal layer.