High productivity spray processing for the metallization of semiconductor workpieces
Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.
1. Processing equipment for the metallization of a plurality of semiconductor workpieces, comprising:
a controlled atmospheric non-oxidizing gas region comprising at least two enclosed deposition zones, said controlled atmospheric non-oxidizing gas region isolated from external oxidizing ambient;
a temperature controller adjusting the temperature of said semiconductor workpiece in each of said at least two enclosed deposition zones;
each of said enclosed deposition zones comprising at least one spray gun for the metallization of said semiconductor workpiece;
a transport system moving said semiconductor workpiece through said controlled atmospheric non-oxidizing gas region; and
a batch carrier plate carrying said semiconductor workpiece through said controlled atmospheric non-oxidizing gas region gas region;
wherein said controlled atmospheric non-oxidizing gas region further comprises a pre-cleaning zone,
wherein said pre-cleaning zone is a gas based pre-cleaning zone.
2. The processing equipment of claim 1 , further comprising a shadow mask exposing and defining a metallization pattern on said semiconductor workpiece.
3. The processing equipment of claim 2 , wherein said shadow mask is a discrete patterned mask positioned on said semiconductor workpiece.
4. The processing equipment of claim 2 , further comprising an integrated mask cleaning system.
5. The processing equipment of claim 2 , wherein said shadow mask are strips arranged in a roll-to-roll arrangement.
6. The processing equipment of claim 2 , wherein said shadow mask are strips arranged in a continuous strips arrangement.
7. The processing equipment of claim 6 , further comprising a strips cleaning segment.
8. The processing equipment of claim 1 , wherein said controlled atmospheric non-oxidizing gas region comprises at least three enclosed deposition zones.
9. The processing equipment of claim 1 , wherein said controlled atmospheric non-oxidizing gas region further comprises a pre-cleaning zone.
10. The processing equipment of claim 9 , wherein said pre-cleaning zone is a gas based pre-cleaning zone.