IP Library Granted Patent US 8,964,808
Granted Patent B2
US 8,964,808 · App. 13/730,363 · Granted Feb 24, 2015

Laser light source and method for producing a laser light source

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Quick Facts
Patent No.
US 8,964,808
App. No.
13/730,363
Granted
Feb 24, 2015
Kind
B2
Abstract

A laser light source comprises, in particular, a semiconductor layer sequence ( 10 ) having an active region ( 45 ) and a radiation coupling-out area ( 12 ) having a first partial region ( 121 ) and a second partial region ( 122 ) different than the latter, and a filter structure ( 5 ), wherein the active region ( 45 ) generates, during operation, coherent first electromagnetic radiation ( 51 ) having a first wavelength range and incoherent second electromagnetic radiation ( 52 ) having a second wavelength range, the coherent first electromagnetic radiation ( 51 ) is emitted by the first partial region ( 121 ) along an emission direction ( 90 ), the incoherent second electromagnetic radiation ( 52 ) is emitted by the first partial region ( 121 ) and by the second partial region ( 122 ), the second wavelength range comprises the first wavelength range, and the filter structure ( 5 ) at least partly attenuates the incoherent second electromagnetic radiation ( 52 ) emitted by the active region along the emission direction ( 90 ).

Claims (16)

1. A laser light source, comprising:

a semiconductor layer sequence having an active region and a radiation coupling out area having a first partial region and a second partial region different than the first partial region; and

a filter structure having at least one first filter element,

wherein

the active region generates, during operation of the laser light source, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range,

the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction,

the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region,

the second wavelength range comprises the first wavelength range,

the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction,

the at least one first filter element has an angle dependent and/or a wavelength dependent transmissivity for electromagnetic radiation, the transmissivity of the at least one first filter element decreasing with increasing angle with respect to the emission direction and/or with increasing deviation from the first wavelength range,

the at least one first filter element comprises a Bragg mirror, and

the Bragg mirror has a wavelength dependent reflectivity having a global primary maximum and at least one local secondary maximum, and wherein the local secondary maximum lies in the first wavelength range.

2. The laser light source as claimed in claim 1 , wherein the filter structure comprises at least one second filter element arranged on a surface of the semiconductor layer sequence which lies opposite the radiation coupling out area.

3. The laser light source as claimed in claim 2 , wherein the at least one second filter element has an angle dependent transmissivity for electromagnetic radiation, and wherein the transmissivity of the second filter element increases with increasing angle with respect to the emission direction.

4. The laser light source as claimed in claim 2 , wherein the at least one second filter element comprises a Bragg mirror.

5. The laser light source as claimed in claim 1 , wherein the filter structure forms at least one part of an optical resonator for the coherent first electromagnetic radiation, in which the active region is arranged.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →