Phase change memory apparatus and fabrication method thereof

1. A method of manufacturing a phase change memory apparatus, comprising:

forming a selective epitaxial growth layer on an active region of a semiconductor substrate;

forming a trench in the selective epitaxial growth layer;

forming an electrode having an opposite conductivity to the selective epitaxial growth layer in a portion of the trench in order to form a diode by the selective epitaxial growth layer and the electrode; and forming a contact hole in the selective epitaxial growth layer to expose a portion of the active region; forming an ionization layer on a side wall of the contact hole; and forming a word line contact within the contact hole

forming an electrode contact on the electrode, wherein the electrode contact is formed on the electrode to a determined height within the trench.

2. The method of claim 1 , wherein the electrode contact is formed to be self-aligned with the trench.

3. The method of claim 1 , wherein the electrode contact comprises a metal material.

4. The method of claim 1 , wherein forming the electrode comprises implanting ions having an opposite conductivity to the selective epitaxial growth layer in the selective epitaxial growth layer.

5. The method of claim 1 , wherein forming the electrode comprises depositing a material of an opposite conductivity to the selective epitaxial growth layer.

6. The method of claim 5 , further comprising forming a phase change material layer on the electrode contact.

7. The method of claim 6 , wherein at least one of the phase change material layer and the electrode contact is buried within the trench.

8. The method of claim 1 , wherein a length of the selective epitaxial growth layer is greater than a width of the selective epitaxial growth layer.