Light-emitting element and the manufacturing method thereof
View Patent ↗A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.
1. A light-emitting element comprising:
a light-emitting stack comprising an upper surface and a lower surface opposite to the upper surface;
a recess structure penetrating the upper surface, and comprising a first bottom surface in the light-emitting stack and a first side surface connected between the upper surface and the first bottom surface;
a first electrode structure comprising a second bottom surface electrically connected to the first bottom surface, and a second side surface facing the first side surface; and
a dielectric layer formed between the first side surface and the second side surface, wherein the first electrode structure is entirely between the upper surface and the lower surface of the light-emitting stack.
2. The light-emitting element according to claim 1 , wherein the light-emitting stack further comprises:
a first semiconductor layer facing the first bottom surface and having a thickness;
an active layer formed on the first semiconductor layer; and
a second semiconductor layer formed on the active layer.
3. The light-emitting element according to claim 2 , wherein the recess structure has a depth less than the thickness of the first, semiconductor layer.
4. The light-emitting element according to claim 3 , wherein the first electrode structure comprises a contact portion laterally extended into the first semiconductor layer.
5. The light-emitting element according to claim 4 , wherein the first electrode structure comprises a pad electrode and an extension electrode extended from the pad electrode, and the contact portion is extended from the extension electrode.
6. The light-emitting element according to claim 4 , wherein the first electrode structure comprises a pad electrode and an extension electrode extended from the pad electrode, and the contact portion is extended from the pad electrode.
7. The light-emitting element according to claim 4 , wherein the first electrode structure comprises a pad electrode and an extension electrode extended from the pad electrode, and the contact portion is extended from the pad electrode and the extension electrode.
8. The light-emitting element according to claim 4 , wherein the contact portion is under the active layer.
9. The light-emitting element according to claim 2 , wherein the first side surface is connected to the second semiconductor layer, the active layer, and a partial thickness of the first semiconductor.
10. The light-emitting element according to claim 2 , further comprising a second electrode structure formed on the second semiconductor layer.
11. The light-emitting element according to claim 2 , wherein the second bottom surface of the first electrode structure is directly connected to the first semiconductor layer.
12. The light-emitting element according to claim 11 , wherein the first bottom surface comprises an arc surface.
13. The light-emitting element according to claim 1 , wherein the first electrode structure comprises a top end opposite to the second bottom surface, and the top end is higher than the active layer and lower than the upper surface.
14. The light-emitting element according to claim 1 , further comprising a metal layer formed between the second bottom surface of the first electrode structure and the first bottom surface of the recess structure.