Nitride phosphors with interstitial cations for charge balance

1. A phosphor comprising a nitride-based composition represented by the chemical formula:

M (x/v) (M′ a M″ b )Si (c-x) Al x N d :RE, wherein:

M is at least one monovalent, divalent or trivalent metal with valence v;

M′ is at least one divalent metal;

M″ is at least one trivalent metal;

2a+3b+4c=3d;

x satisfies 0.01≦x≦0.6c; and

RE is at least one element selected from the group consisting of Eu, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb;

wherein said nitride-based composition has the general crystalline structure of M′ a M″ b Si c N d , Al substitutes for Si within said crystalline structure, and M is located within said crystalline structure substantially at the interstitial sites and wherein:

a is in the range of 0 to 6, end points inclusive;

b is in the range of 0 to 4, end points inclusive;

c is in the range of 1 to 6, end points inclusive; and

d is in the range of 2 to 11, end points inclusive.

2. The phosphor of claim 1 , wherein M is at least one metal ion selected from the group consisting of Li, Na, K, Mg, Ca, Sr, Ba, Zn, Sc, Y, Lu, La, Ce, Gd, Sm, Pr, Tb, and Yb.

3. The phosphor of claim 1 , wherein M′ is at least one alkaline earth element selected from the group consisting of Mg, Sr, Ba and Zn.

4. The phosphor of claim 1 , wherein M″ is at least one element selected from the group consisting of Sc, Y, Lu, La, Gd, Tb, Sm, Pr, Yb and Bi.

5. The phosphor of claim 1 , wherein said chemical formula is selected from the group consisting of M x/2 M′Si 1-x Al x N 2 :RE; M x/2 M′M″Si 1-x Al x N 3 :RE; M x/2 M″Si 3-x Al x N 5 :RE; M x/2 M′ 2 M″Si 2-x Al x N 5 :RE; M x/2 M′Si 4-x Al x N 6 :RE; M x/2 M″ 4 Si 3-x Al x N 8 :RE; M x/2 M′ 6 Si 3-x Al x N 8 :RE; M x/2 M′ 3 M″ 2 Si 3-x Al x N 8 :RE; M x/2 M″ 3 Si 3-x Al x N 7 :RE; M x/2 M′ 3 M″Si 3-x Al x N 7 :RE; M x/2 M′ 2 M″Si 5-x Al x N 9 :RE; M x/2 M′M″ 3 Si 4-x Al x N 9 :RE; M x/2 M″Si 6-x Al x N 9 :RE; M x/2 M″ 3 Si 6-x Al x N 11 :RE; and M x/2 M′M″Si 5-x Al x N 11 :RE.

6. A phosphor comprising a nitride-based composition represented by the chemical formula:

M x/2 M′ 2 Si (5-x) Al x N 8 :RE, wherein:

M is at least one alkaline earth element selected from the group consisting of Mg, Sr, Ba and Zn;

M′ is at least one metal ion selected from the group consisting of Mg, Ca, Sr, Ba, and Zn;

RE is at least one element selected from the group consisting of Eu, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm and Yb; and

x satisfies 0.01≦x≦3;

wherein said nitride-based composition has a crystalline structure comprising a space group selected from the group consisting of Pmn2 1 , Cc, derivatives thereof, and mixtures thereof, Al substitutes for Si within said crystalline structure, and M is located within said crystalline structure substantially at the interstitial sites.

7. The phosphor of claim 6 , wherein the chemical formula is

RE x′ M x/2 M′ (2-x′) Si (5-x) Al x N 8 , and

x′ satisfies 0.00001≦x′≦0.2.

8. The phosphor of claim 6 , wherein M′ is Ca x′ Sr (1-x″) and x″ satisfies 0≦x″≦1.

9. The phosphor of claim 7 , wherein x satisfies 0.01≦x≦1.3.

10. The phosphor of claim 7 , wherein x satisfies 1≦x≦2.

11. The phosphor of claim 6 , wherein RE is Eu.

12. The phosphor of claim 6 , wherein the space group is Pmn2 1 .

13. The phosphor of claim 6 , wherein the phosphor absorbs radiation at a wavelength ranging from about 200 nm to about 420 nm and emits light with a photoluminescence peak emission wavelength within a range from about 590 nm to about 675 nm.

14. The phosphor of claim 13 , wherein the photoluminescence peak emission wavelength is within a range from about 610 nm to about 650 nm.

15. A phosphor comprising a nitride-based composition represented by the chemical formula:

M (1.5x) (Si (1-x) Al x ) 3 N 4 :RE, wherein:

M is at least one metal ions selected from the group consisting of Li, Na, K, Mg, Ca, Sr, Ba, Zn, Sc, Y, Lu, La, Ce, Gd, Sm, Pr, Tb, and Yb;

RE is at least one element selected from the group consisting of Eu, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb; and

x satisfies 0.01≦x≦1;

wherein said nitride-based composition has the general crystalline structure of α-Si 3 N 4 , Al substitutes for Si within said crystalline structure, and M is located within said crystalline structure substantially at the interstitial sites.

16. The phosphor of claim 15 , wherein the chemical formula is

RE x′ M (1.5x) (Si (1-x) Al x ) 3 N 4 , and

x′ satisfies 0.0001≦x′≦0.2.

17. The phosphor of claim 16 , wherein RE is Eu.

18. The phosphor of claim 16 , wherein:

x satisfies 0.07≦x≦0.7; and

x′ satisfies 0.001≦x′≦0.1.

19. The phosphor of claim 15 , wherein M is Ca and the phosphor absorbs radiation at a wavelength ranging from about 200 nm to about 420 nm and emits light with a photoluminescence peak emission wavelength within a range from about 570 nm to about 620 nm.

20. The phosphor of claim 19 , wherein the photoluminescence peak emission wavelength is within a range from about 590 nm to about 610 nm.

21. The phosphor of claim 15 , wherein M is Sr and the phosphor absorbs radiation at a wavelength ranging from about 200 nm to about 420 nm and emits light with a photoluminescence peak emission wavelength within a range from about 515 nm to about 650 nm.

22. The phosphor of claim 21 , wherein the photoluminescence peak emission wavelength is within a range from about 520 nm to about 550 nm.

23. The phosphor of claim 21 , wherein the photoluminescence peak emission wavelength is within a range from about 540 nm to about 595 nm.

24. The phosphor of claim 21 , wherein the photoluminescence peak emission wavelength is within a range from about 600 nm to about 650 nm.