Disturb-resistant non-volatile memory device and method
A method of forming a disturb-resistant non volatile memory device. The method includes providing a semiconductor substrate having a surface region and forming a first dielectric material overlying the surface region. A first wiring material overlies the first dielectric material, a doped polysilicon material overlies the first wiring material, and an amorphous silicon switching material overlies the said polysilicon material. The switching material is subjected to a first patterning and etching process to separating a first strip of switching material from a second strip of switching spatially oriented in a first direction. The first strip of switching material, the second strip of switching material, the contact material, and the first wiring material are subjected to a second patterning and etching process to form at least a first switching element from the first strip of switching material and at least a second switching element from the second strip of switching material, and a first wiring structure comprising at least the first wiring material and the contact material. The first wiring structure being is in a second direction at an angle to the first direction.
1. A non-volatile memory device structure, comprising:
a substrate having a surface region;
a first dielectric material overlying the surface region of the semiconductor substrate;
a first cell, the first cell comprising a first wiring structure extending in a first direction overlying the first dielectric material, a first contact region comprising a p+ polysilicon material, a first switching region comprising an amorphous silicon material, and a second wiring structure extending in a second direction orthogonal to the first direction;
a second cell, the second cell comprising the first wiring structure, a second contact region comprising the p+ polysilicon material, a second switching region comprising the amorphous silicon material, and a third wiring structure separated from the second wiring structure and parallel to the second wiring structure; and
a second dielectric material disposed at least in a region between the first switching region and the second switching region to electrically and physically isolate the first switching region and the second switching region.
2. The device of claim 1 wherein the first call and the second cell are provided in an N by M interconnected crossbar array.
3. The device of claim 1 wherein the second dielectric material is further disposed in a first region between the first contact region and the second contact region, and a second region between the second wiring structure and the third wiring structure.