Self starting mode-locked laser oscillator
A laser oscillator to generate a pulsed light beam includes an output coupler mirror, configured to reflect a reflected portion of the pulsed light beam back into the laser oscillator, and to couple an outputted portion of the pulsed light beam out from the laser oscillator; an end-mirror, configured to return the pulsed light beam into the laser oscillator; a gain material, positioned between the output coupler mirror and the end-mirror along an optical path, configured to amplify the pulsed light beam; a self-starting saturable absorber, configured to self-start a pulsed mode-locking operation of the laser oscillator; and a pulse-shaping saturable absorber, configured to shape pulses of the pulsed light beam into laser pulses with a pulse length of less than 1,000 femtoseconds.
1. A laser oscillator to generate a pulsed light beam, comprising:
an output coupler mirror, configured
to reflect a reflected portion of the pulsed light beam back into the laser oscillator, and
to couple an outputted portion of the pulsed light beam out from the laser oscillator;
an end-mirror, configured to return the pulsed light beam into the laser oscillator;
a gain material, positioned between the output coupler mirror and the end-mirror along an optical path, configured to amplify the pulsed light beam;
a self-starting saturable absorber, configured to self-start a pulsed mode-locking operation of the laser oscillator; and
a pulse-shaping saturable absorber, configured to shape pulses of the pulsed light beam into laser pulses with a pulse length of less than 1,000 femtosecond.
2. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber and the pulse-shaping saturable absorber are separate optical elements.
3. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber and the pulse-shaping saturable absorber are separate layers integrated on the same substrate.
4. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber and the pulse-shaping saturable absorber are separate layers integrated with the end-mirror.
5. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber has a self-starting recovery time T SS in the range of one of 10 fs-100 ns, 100 fs-10 ns, and 500 fs-10 ns.
6. The laser oscillator of claim 1 , wherein:
the pulse-shaping saturable absorber has a pulse-shaping recovery time T PS in the range of one of 1 fs-1 ps, 10 fs-1 ps, and 50 fs-500 fs.
7. The laser oscillator of claim 1 , wherein:
a ratio of a self-starting recovery time T SS of the self-starting saturable absorber to a pulse-shaping recovery time T PS of the pulse-shaping saturable absorber is within one of the ranges of 1-1,000 and 10-100.
8. The laser oscillator of claim 1 , wherein:
at least one of the self-starting saturable absorber and the pulse-shaping saturable absorber comprises at least one of
a semiconductor saturable absorption mirror (SESAM), a set of doping layers, a semiconductor quantum well structure, an atomic absorber in a glass, a quantum dot, a thin film or an organic dye, an organic semiconductor, and a carbon nanotube layer.
9. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber is configured to operate in one of a transmissive mode and a reflective mode; and
the pulse-shaping saturable absorber is configured to operate in one of a transmissive mode and a reflective mode.
10. The laser oscillator of claim 1 , wherein:
the laser oscillator is configured to vary a laser power density spatially; and
the self-starting saturable absorber is disposed at a location where the power density is higher than the power density at a location where the puke-shaping saturable absorber is disposed.
11. The laser oscillator of claim 1 , wherein:
the laser oscillator is configured to spatially vary a beam radius R of the pulsed light beam within the laser oscillator;
the self-starting saturable absorber is disposed at a first location in the laser oscillator where the beam radius is R=R1; and
the pulse-shaping saturable absorber is disposed at a second location in the laser oscillator where the beam radius is R=R2; wherein
R1 is smaller than R2.
12. The laser oscillator of claim 1 , wherein:
the self-starting saturable absorber and the pulse-shaping saturable absorber are formed within the end-mirror;
the end-minor is configured to form a standing wave from an incident light and a reflected light, the standing wave having at least one node; and
the pulse-shaping saturable absorber is formed closer to the node than the self-starting saturable absorber.
13. The laser oscillator of claim 1 , wherein:
a ratio of a saturation fluence of the pulse-shaping saturable absorber to a saturation fluence of the self-starting saturable absorber is in a range of one of 1-100, 2-30, and 3-10.
14. The laser oscillator of claim 1 , wherein:
a ratio an optical fluence of the pulse-shaping saturable absorber to a saturation fluence of the pulse-shaping saturable absorber is in a range of one of 1-100, 2-30, and 3-10.
15. A laser oscillator to generate a pulsed light beam, comprising:
an output coupler or, configured
to reflect a portion of the pulsed light beam back into the laser oscillator, and
to couple a portion of the pulsed light beam out from the laser oscillator;
a semiconductor saturable absorption mirror structure, comprising
an end-mirror layer, configured to return, the pulsed light beam into the laser oscillator,
a self-starting saturable absorption layer, configured to self-start a pulsed mode-locking operation of the laser oscillator, and
a pulse-shaping saturable absorption layer, configured to shape pulses of the pulsed light beam into laser pulses with a pulse length of less than 1,000 femtosecond; and
a gain material, positioned between the output coupler mirror and the semiconductor saturable absorption mirror along an optical path, configured to amplify the pulsed light beam.
16. The laser oscillator of claim 15 , wherein:
the self-starting saturable absorption layer is formed within the semiconductor saturable absorption mirror structure at a location where an intensity of the pulsed light beam is greater than at a location of the pulse-shaping saturable absorption layer.