PATTERNED ARTICLES AND LIGHT EMITTING DEVICES THEREFROM
A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface portions. At least a top surface of the plurality of features include an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to the substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material). The epi-blocking layer is not on the planar substrate surface portions.
1 . A light emitting diode (LED) device, comprising:
a patterned article, comprising:
a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index;
a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions protruding above a height of said planar substrate surface portions,
wherein at least a top surface of said plurality of features include an epi-blocking layer including an (i) a non-single crystal material having a refractive index lower as compared to said substrate refractive index or (ii) a reflecting metal or a metal alloy material (reflecting material), and wherein said epi-blocking layer is not on said planar substrate surface portions, and
an epitaxial stack on said patterned article comprising a p-type layer, an n-type layer, and an active layer between said p-type layer and said n-type layer, wherein said epitaxial stack is epitaxially oriented with respect to said planar substrate surface portions.
2 . The LED device of claim 1 , wherein said substrate support has a patterned surface which further provides bottom portions for said plurality of features, and wherein said non-single crystal material or said reflecting material is on top of said bottom portions.
3 . The LED device of claim 1 , wherein said substrate support has a planar top surface throughout, and wherein said plurality of features consist of said non-single crystal material.
4 . The LED device of claim 1 , wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon.
5 . The LED device of claim 1 , wherein said non-single crystal material comprises silicon oxide, silicon nitride, an aluminate, calcium fluoride, or magnesium fluoride.
6 . The LED device of claim 1 , wherein said p-type layer, said n-type layer, and said active layer all comprise III-V materials.
7 . The LED device of claim 6 , wherein said III-V materials all comprise GaN.
8 . The LED device of claim 1 , wherein said plurality of features include both said non-single crystal material and said reflecting material, wherein said reflecting material is below said non-single crystal material.
9 . The LED device of claim 1 , wherein a thickness of said epi-blocking layer is from 10 nm to 1,000 nm.
10 . A patterned article, comprising:
a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index;
a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions protruding above a height of said planar substrate surface portions,
wherein at least a top surface of said plurality of features include an epi-blocking layer including a (i) non-single crystal material having a refractive index lower as compared to said substrate refractive index or (ii) a reflecting metal or a metal alloy (reflecting material), and wherein said epi-blocking layer is not on said planar substrate surface portions.
11 . The patterned article of claim 10 , wherein said substrate support has a patterned surface which provides bottom portions for said plurality of features, wherein said non-single crystal material or said reflecting material is on top of said bottom portions.
12 . The patterned article of claim 10 , wherein said substrate support has said planar substrate surface portions throughout, and wherein said plurality of features consist of said non-single crystal material or said reflecting material.
13 . The patterned article of claim 10 , wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon.
14 . The patterned article of claim 10 , wherein said non-single crystal material comprises silicon oxide, silicon nitride, an aluminate, calcium fluoride, or magnesium fluoride.
15 . The patterned article of claim 10 , wherein said plurality of features include both said non-single crystal material and said reflecting material, and wherein said reflecting material is below said non-single crystal material.
16 . A method of forming a patterned article, comprising:
providing a substrate support including planar substrate surface portions comprising a substrate material having a substrate refractive index;
depositing an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to said substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material) on said substrate support, and
patterning said epi-blocking layer to form a patterned top surface on said substrate support including a plurality of features lateral to said planar substrate surface portions and protruding above said planar substrate surface portions, wherein at least a top surface of said plurality of features include said epi-blocking layer, and wherein said epi-blocking layer is not on said planar substrate surface portions.
17 . The method of claim 16 , wherein said substrate support has a planar top surface throughout, and wherein said plurality of features consist of said non-single crystal material or said reflecting material.
18 . The method of claim 16 , further comprising before said depositing and patterning:
forming a masking layer on said substrate support, wherein said masking layer exposes a portion of a top surface of said substrate support;
performing at least one of a wet etch and a dry etch process to remove an exposed part of said top surface of said substrate support to form a patterned substrate including said planar substrate surface portions and bottom feature portions for said plurality of features lateral to said planar substrate surface portions;
depositing a sacrificial layer after said performing, and
chemical mechanical polishing (CMP) or dry etching for selectively removing said sacrificial layer from raised portions of said plurality of features while preserving said sacrificial layer over said planar substrate surface portions.
19 . The method of claim 16 , wherein said substrate material comprises sapphire, silicon carbide, gallium nitride, or silicon.
20 . The method of claim 16 , further comprising forming an epitaxial stack on said patterned article comprising a p-type layer, an n-type layer, and an active layer between said p-type layer and said n-type layer, wherein said epitaxial stack is epitaxially oriented with respect to said planar substrate surface portions.