Method of alloying reactive components
View Patent ↗Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.
1. A method of making a hyperelastic single-crystal CuAlNi shape memory alloy, the method comprising:
forming an ingot of CuAlNi by:
layering a layer of aluminum adjacent to a layer of copper and a layer of nickel;
heating the layers;
melting the layers;
mixing the melted layers; and
cooling the mixture to form the ingot;
placing a seed of a desired composition for the shape memory alloy into a melt of the ingot;
drawing the seed from the melt at a controlled rate so that a solid crystal is formed at a crystallization front; and
quenching the drawn crystal to produce a single crystal beta phase.
2. The method of claim 1 , wherein the quenching is in salt water from 850° C.
3. The method of claim 1 , further comprising reacting the layers before melting.
4. The method of claim 1 , wherein the melting includes the layer of aluminum beginning to melt prior to the melting of the layers of copper and nickel.
5. The method of claim 1 , wherein the drawn crystal is heated to a beta phase temperature of 850-1000° C. and the quenching is from the beta phase temperature.
6. A method of making a hyperelastic single-crystal CuAlNi shape memory alloy, the method comprising:
forming an ingot of CuAlNi by:
layering a plurality of layers of aluminum with one or more layers of copper and one or more layers of nickel, in an alternating pattern so that each layer of copper and each layer of nickel is sandwiched between two layers of aluminum;
heating the layers;
reacting the heated layers;
melting the reacted layers, wherein the plurality of aluminum layers begin to melt prior to the melting of the one or more layers of copper and nickel;
mixing the melted layers; and
cooling the mixture to form the ingot;
placing a seed of a desired composition for the shape memory alloy into a melt of the ingot;
drawing the seed from the melt at a controlled rate so that a solid crystal is formed at a crystallization front;
heating the drawn crystal at a beta phase temperature of 850-1000° C.; and
quenching the drawn crystal from the beta phase temperature to produce a single crystal beta phase shape memory alloy.
7. The method of claim 6 , wherein the quenching is in salt water.
8. A method of making a hyperelastic single-crystal shape memory alloy, the method comprising:
forming an alloy melt by:
layering dissimilar materials in an alternating pattern to provide contact between the dissimilar materials;
heating the layers of dissimilar materials;
melting the layers of dissimilar materials; and
mixing the melted layers to obtain homogeneity;
placing a seed of a desired composition for the shape memory alloy into the alloy melt;
drawing the seed from the alloy melt at a controlled rate so that a solid crystal is formed at a crystallization front.
9. The method of claim 8 , wherein the layering of dissimilar materials comprises layering a layer of aluminum adjacent to a layer of copper and a layer of nickel whereby the alloy melt is CuAlNi and wherein the seed is CuAlNi.
10. The method of claim 9 , wherein the melting includes the layer of aluminum beginning to melt prior to the melting of the layers of copper and nickel.
11. The method of claim 8 , further comprising:
reheating and quenching the drawn crystal to produce a single crystal beta phase.
12. The method of claim 11 , wherein the quenching is in salt water.
13. The method of claim 11 , wherein reheating the drawn crystal is to a beta phase temperature of 850-1000° C. and the quenching is from the beta phase temperature.
14. The method of claim 8 , further comprising reacting the layers before melting.
15. The method of claim 8 , further comprising, after mixing, and prior to placing the seed:
cooling the mixture to form an ingot; and
heating the ingot to form another melt of the alloy into which the seed is placed.