Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
View Patent ↗There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (Al X O Y , where 0<Y/X<3/2) that absorbs light.
1. A thin-film transistor comprising:
a gate electrode;
a gate insulating film provided to cover the gate electrode;
an oxide semiconductor film provided on the gate insulating film;
a source electrode and a drain electrode each made of a transparent conductive oxide, and provided on the oxide semiconductor film;
a protective film made of a metal oxide, and provided on the source electrode and the drain electrode; and
a light-shielding film provided on the protective film,
wherein a distance between the oxide semiconductor film and the light-shielding film is about 2 nm or more and about 400 nm or less.
2. The thin-film transistor according to claim 1 , wherein the metal oxide is one of an aluminum oxide and a titanium oxide.
3. The thin-film transistor according to claim 2 , further comprising a low-resistance wiring, wherein the source electrode and/or the drain electrode are extended on the gate insulating film outside the oxide semiconductor film, and the low-resistance wiring is electrically connected to the source electrode and/or the drain electrode at extended parts.
4. The thin-film transistor according to claim 1 , wherein the thickness of each of the source electrode and the drain electrode is 1 nm or more and about 200 nm or less.
5. The thin-film transistor according to claim 1 , wherein the thickness of the protective film is 1 nm or more and about 200 nm or less.
6. The thin-film transistor according to claim 1 , wherein the combined thickness of the source electrode and drain electrode with the protective film is about 2 nm or more and about 400 nm or less.
7. The thin-film transistor according to claim 1 , wherein the light-shielding film covers an area of the oxide semiconductor film.