Semiconductor structure having sets of III-V compound layers and method of forming the same

1. A semiconductor structure, comprising:

a substrate;

a first III-V compound layer over the substrate, the first III-V compound layer having a first type doping;

one or more sets of III-V compound layers over the first III-V compound layer, each set of the one or more sets of III-V compound layers comprising a lower III-V compound layer and an upper III-V compound layer over the lower III-V compound layer, the upper III-V compound layer having the first type doping, and the lower III-V compound layer being at least one of undoped, unintentionally doped having a second type doping, or doped having the second type doping;

a second III-V compound layer over the one or more sets of III-V compound layers, the second III-V compound layer being either undoped or unintentionally doped having the second type doping; and

an active layer over the second III-V compound layer,

wherein the first III-V compound layer has a thickness greater than that of the corresponding upper III-V compound layer of any one of the one or more sets of III-V compound layers by at least 0.05 μm, and

wherein, the first III-V compound layer has a doping concentration greater than that of the corresponding upper III-V compound layer of any one of the two or more sets of III-V compound layers.

2. The semiconductor structure of claim 1 , wherein the first type doping is P-type doping, and the second type doping is N-type doping.

3. The semiconductor structure of claim 2 , wherein the first type doping is implemented by dopants including carbon, iron, magnesium, or zinc.

4. The semiconductor structure of claim 2 , wherein the second type doping is implemented by dopants including silicon or oxygen.

5. The semiconductor structure of claim 1 , wherein, when a layer over the first III-V compound layer is configured to cause a depletion region formed within the first III-V compound layer, the first III-V compound layer has a thickness sufficient to prevent the depletion region from extending through the entire thickness of the first III-V compound layer.

6. The semiconductor structure of claim 1 , wherein

the thickness of the first III-V compound layer is greater than 0.15 μm, and

the doping concentration of the first III-V compound layer has a doping concentration is greater than 1.0×10 19 atoms/cm 3 .

7. The semiconductor structure of claim 1 , wherein the upper III-V compound layer of one of the one or more sets of III-V compound layers has a thickness sufficient to prevent a depletion region from extending through the entire thickness of the upper III-V compound layer when a layer over the upper III-V compound layer is configured to cause the depletion region formed within the upper III-V compound layer.

8. The semiconductor structure of claim 7 , wherein the upper III-V compound layer of the one of the one or more sets of III-V compound layers has a thickness no less than that of the layer immediately on the upper III-V compound layer.

9. The semiconductor structure of claim 1 , wherein the upper III-V compound layer of one of the one or more sets of III-V compound layers has a first thickness, a lower III-V compound layer of the one of the one or more sets of III-V compound layers has a second thickness, and the first thickness and the second thickness range from 0.05 μm to 0.1 μm.

10. The semiconductor structure of claim 1 , wherein the doping concentration of the upper III-V compound layer of one of the one or more sets of III-V compound layers is between 1.0×10 15 to 1.0×10 19 atoms/cm 3 .

11. The semiconductor structure of claim 1 , the lower III-V compound layer of one of the one or more sets of III-V compound layers has a doping concentration no greater than 1.0×10 17 atoms/cm 3 .

12. The semiconductor structure of claim 1 , wherein the first III-V compound layer, the second III-V compound layer, and the one or more sets of III-V compound layers are gallium nitride (GaN) layers.

13. A semiconductor structure, comprising:

a substrate;

a graded aluminum gallium nitride (AlGaN) layer over the substrate;

a first gallium nitride (GaN) layer over the graded AlGaN layer, the first GaN layer having P-type doping;

one or more sets of GaN layers over the first GaN layer, each set of the one or more sets of GaN layers comprising a lower GaN layer and an upper GaN layer on the lower GaN layer, the upper GaN layer having the P-type doping, and the lower GaN layer being at least one of undoped, unintentionally doped having N-type doping, or doped having the N-type doping;

a second GaN layer over the one or more sets of GaN layers, the second GaN layer being either undoped or unintentionally doped having the N-type doping;

an active layer over the second GaN layer;

a source electrode over the second GaN layer;

a drain electrode over the second GaN layer; and

a gate electrode between the source electrode and the drain electrode and over the active layer.

14. The semiconductor structure of claim 13 , wherein the active layer comprises AlN or AlGaN.

15. The semiconductor structure of claim 14 , further comprising:

a dielectric layer between the gate electrode and the active layer.

16. The semiconductor structure of claim 13 , wherein one of the one or more sets of GaN layers is directly on the first GaN layer, the lower III-V compound layer of the one pair of the one or more sets of GaN layers is configured to cause a depletion region formed within the first GaN layer, and the first GaN layer has a thickness sufficient to prevent the depletion region from extending through the entire thickness of the first GaN layer.

17. The semiconductor structure of claim 13 , wherein the upper GaN of one of the one or more sets of GaN layers has a doping concentration ranging from 1.0×10 15 to 1.0×10 19 atoms/cm 3 .

18. The semiconductor structure of claim 13 , wherein the lower GaN layer of one of the one or more sets of GaN layers has a doping concentration no greater than 1.0×10 17 atoms/cm 3 .

19. A method of forming a semiconductor structure, the method comprising:

forming a first III-V compound layer having a first-type doping over a substrate;

forming one or more sets of III-V compound layers over the first III-V compound layer, each set of the one or more sets of III-V compound layers comprising a lower III-V compound layer and an upper III-V compound layer over the lower III-V compound layer, the upper III-V compound layer having the first type doping, and the lower III-V compound layer being at least one of undoped, unintentionally doped having a second type doping, or doped having the second type doping;

forming a second III-V compound layer over the one or more sets of III-V compound layers, the second III-V compound layer being either undoped or unintentionally doped having the second type doping; and

forming an active layer over the second III-V compound layer,

wherein the first III-V compound layer has a thickness greater than that of the corresponding upper III-V compound layer of any one of the one or more sets of III-V compound layers by at least 0.05 μm, and

wherein, the first III-V compound layer has a doping concentration greater than that of the corresponding upper III-V compound layer of any one of the one or more sets of III—V compound layers.

20. The method of claim 19 , wherein the forming the first III-V compound layer, the forming the second III-V compound layer, and the forming the one or more pairs of III-V compound layers are performed by using a metal-organic chemical vapor deposition (MOCVD) process.