IP Library Granted Patent US 9,773,750
Granted Patent B2
US 9,773,750 · App. 13/749,647 · Granted Sep 26, 2017

Method of transferring and bonding an array of micro devices

Inventors: Andreas Bibl (Los Altos, CA); John A. Higginson (Santa Clara, CA); Hsin-Hua Hu (Los Altos, CA); Hung-Fai Stephen Law (Los Altos, CA)
Assignee: Apple Inc.
H01L24/83H01L24/75H01L24/95H01L21/67144H01L2224/29105H01L2224/29109H01L2224/29111H01L2224/29113H01L2224/29118H01L2224/29124H01L2224/29144H01L2224/29147H01L2224/29155H01L2224/29183H01L2224/7598H01L2224/75261H01L2224/75281H01L2224/75282H01L2224/75283H01L2224/75725H01L2224/83H01L2224/8383H01L2224/83193H01L2224/83203H01L2224/83805H01L2224/83825H01L2224/83948H01L2924/01322H01L2924/01327H01L2924/12041H01L2924/1461H01L2933/0066
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Quick Facts
Patent No.
US 9,773,750
App. No.
13/749,647
Granted
Sep 26, 2017
Kind
B2
Abstract

Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

Claims (14)

1. A method comprising:

picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads;

contacting a micro device bonding layer with a receiving substrate bonding layer on a receiving substrate for each respective micro device, wherein each receiving substrate bonding layer has a lower ambient liquidus temperature than a respective micro device bonding layer, and each receiving substrate bonding layer is characterized by a width extending in a direction parallel to a corresponding micro device bonding layer contact surface that contacts the receiving substrate bonding layer in which each micro device bonding layer contact surface is wider than each receiving substrate bonding layer;

transferring thermal energy from the electrostatic transfer head assembly, liquefying the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate;

releasing the array of micro devices onto the receiving substrate;

wherein each micro device has a maximum width of 1-100 μm parallel to a contact surface of the array of electrostatic transfer heads for picking up the array of micro devices;

wherein the array of electrostatic transfer heads includes an array of mesa structures protruding from a base substrate supporting the array of electrostatic transfer heads, with each mesa structure corresponding to a separate electrostatic transfer head, and each electrostatic transfer head has a contact surface for picking up a single micro device and each electrostatic transfer head contact surface has a maximum width of 1-100 μm;

wherein a substrate supporting the array of electrostatic transfer heads is maintained above room temperature during the sequence of:

picking up the array of micro devices from the carrier substrate with the electrostatic transfer head assembly supporting the array of electrostatic transfer heads;

contacting the micro device bonding layer with the receiving substrate bonding layer on the receiving substrate for each respective micro device;

transferring thermal energy from the electrostatic transfer head assembly to liquefy the receiving substrate bonding layers, and bonding the array of micro devices to the receiving substrate; and

releasing the array of micro devices onto the receiving substrate; and

wherein the substrate supporting the array of electrostatic transfer heads is maintained above the ambient liquidus temperature of the receiving substrate bonding layers and below the ambient liquidus temperature of the micro device bonding layers.

2. The method of claim 1 , wherein each electrostatic transfer head contact surface has a maximum width of 3-20 μm.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 25, 2016
From: LUXVUE TECHNOLOGY CORPORATION
To: APPLE INC.
Reel/Frame 038521/0255 →
RELEASE OF SECURITY INTEREST Recorded May 2, 2014
From: COMERICA BANK
To: LUXVUE TECHNOLOGY CORPORATION
Reel/Frame 032812/0733 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNMENT DOCUMENT PREVIOUSLY RECORDED ON REEL 029694 FRAME 0418. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNORS INTEREST. Recorded Apr 18, 2014
From: BIBL, ANDREAS; HIGGINSON, JOHN A.; HU, HSIN-HUA; LAW, HUNG-FAI STEPHEN
To: LUXVUE TECHNOLOGY CORPORATION
Reel/Frame 032714/0481 →
SECURITY AGREEMENT Recorded May 20, 2013
From: LUXVUE TECHNOLOGY CORPORATION
To: TRIPLEPOINT CAPITAL LLC
Reel/Frame 030450/0558 →
SECURITY AGREEMENT Recorded Mar 21, 2013
From: LUXVUE TECHNOLOGY CORPORATION
To: COMERICA BANK
Reel/Frame 030058/0305 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2013
From: BIBL, ANDREAS; HIGGINSON, JOHN A.; HU, HSIN-HUA; LAW, HUNG-FAI STEPHEN
To: LUXVUE TECHNOLOGY CORPORATION
Reel/Frame 029694/0418 →
Continuity (6)
Continuation In Part 13436260 · Mar 30, 2012
Continuation In Part 13372422 · Feb 13, 2012
Provisional Application 61749892 · Jan 7, 2013
Provisional Application 61597658 · Feb 10, 2012
Provisional Application 61597109 · Feb 9, 2012
Related Publication 20130210194A1 · Aug 15, 2013