Method and structure of integrated micro electro-mechanical systems and electronic devices using edge bond pads
A monolithic integrated electronic device includes a substrate having a surface region and one or more integrated micro electro-mechanical systems and electronic devices provided on a first region overlying the surface region. Each of the integrated micro electro-mechanical systems and electronic devices has one or more contact regions. The first region has a first surface region. One or more trench structures are disposed within one or more portions of the first region. A passivation material overlies the first region and the one or more trench structures. A conduction material overlies the passivation material, the one or more trench structures, and one or more of the contact regions. The device also has one or more edge bond pad structures within a vicinity of the one or more bond pad structures, which are formed by a singulation process within a vicinity of the one or more bond pad structures.
1. A monolithic integrated electronic device, the device comprising:
a substrate having a surface region;
one or more integrated micro electromechanical systems and electronic devices provided on a first region overlying the surface region, each of the integrated micro electro-mechanical systems and electronic devices having one or more contact regions, the first region having a first surface region;
one or more trench structures within one or more portions of the first region;
a passivation material overlying the first region and the one or more trench structures, the passivation material having one or more portions removed within a vicinity of one or more of the contact regions;
a conduction material overlying the passivation material, the one or more trench structures, and one or more of the contact regions, the conduction material having one or more portions of the conduction material removed within a vicinity of one or more of the contact regions and the one or more trench structures to form one or more bond pad structures; and
one or more edge bond pad structures within a vicinity of the one or more bond pad structures, the one or more edge bond pad structures being formed by a singulation process within a vicinity of the one or more bond pad structures.
2. The device of claim 1 wherein the one or more integrated micro electro-mechanical systems and electronic devices comprise one or more devices selected from a group consisting of: CMOS integrated circuit devices, MEMS devices, and anisotropic magnetoresistance (AMR) devices.
3. The device of claim 1 wherein the one or more contact regions comprise one or more bond pads, bonding structures, or conductive regions.
4. The device of claim 1 wherein the one or more trench structures are formed from a wet etching, dry etching, or mechanical process.
5. The device of claim 1 wherein the one or more trench structures are formed from a deep reactive-ion etching (DRIE) process.
6. The device of claim 1 wherein the passivation material comprises an insulating material or dielectric material.
7. The device of claim 1 wherein the removing of one or more portions of the passivation material comprises a wet etching, dry etching, or mechanical process.
8. The device of claim 1 wherein the conduction material comprises a metal layer or metal alloy layer.
9. The device of claim 1 wherein the removing of the one or more portions of the conduction material comprises a wet etching, dry etching, or mechanical process.
10. The device of claim 1 wherein the singulating of the resulting device comprises a dicing, an etching, or a laser scribing process.