IMAGE SENSOR WITH LAYERS OF DIRECT BAND GAP SEMICONDUCTORS HAVING DIFFERENT BAND GAP ENERGIES
Embodiments of an exemplary image sensor structure of the present disclosure contains at least two different layers of band gap semiconductors, where each upper layer of the different layers has a different band gap than a lower layer. For such an image sensor structure, the upper layer has a greater band gap than any layer positioned below the upper layer including the lower layer.
1 . An image sensor structure comprising:
at least two different layers of direct band gap semiconductors positioned in a stack, each upper layer of the different layers having a different band gap than a lower layer,
wherein the upper layer has a greater band gap than any layer positioned below the upper layer including the lower layer,
wherein the lower layer encounters light to be sensed after the light passes through the upper layer.
2 . The image sensor structure of claim 1 , wherein the different layers are composed as an arbitrary chemical composition of a direct band gap semiconductor.
3 . The image sensor structure of claim 1 , wherein the different layers are composed as Al x1 Ga x2 In x3 B x4 N y1 P y2 As y3 Sb y4 , where x1, x2, x3, x4, y1, y2, y3, y4 are molar fractions of elements such that x1+x2+x3+x4=y1+y2+y3+y4=1.
4 . The image sensor structure of claim 3 , wherein the band gap of the different layers varies from approximately 1.42 eV for GaAs, corresponding to a wavelength of 870 nm, to approximately 6.2 eV for AlN, corresponding to a wavelength of 200 nm.
5 . The image sensor of claim 1 , further comprising circuitry enabling measuring and reading out of light energy within a controlled time interval, separately from each layer corresponding to a separate sub-band of a color spectrum.
6 . The image sensor structure of claim 5 , wherein the different layers comprise three layers corresponding to photo-sensitivity in red, green, and blue sub-bands of a color spectrum.
7 . The image sensor structure of claim 6 , wherein the different layers further comprise at least one additional layer corresponding to photo-sensitivity in an ultraviolet sub-band, infrared sub-band, or both infrared and ultraviolet sub-bands.
8 . The image sensor structure of claim 1 , where the semiconductor layers with different band gaps implement a photo-sensitive structure based on electric conductivity increasing with generation of electron-hole pairs by absorption of photons with energy exceeding the band gap energy.
9 . The image sensor structure of claim 8 , where an area of the semiconductor layers is subdivided into specific regions corresponding to sensor pixels.
10 . The image sensor structure of claim 9 , further comprising circuitry enabling measuring and reading out of light energy within a controlled time interval, separately from each layer corresponding to separate sub-band of a color spectrum, wherein each photo-sensitive structure layer of each sensor pixel is connected to the circuitry.
11 . A method comprising:
epitaxially growing a stack of three or more direct band gap photo-diodes with sequentially decreasing band gap from top to bottom, where the photo-diode engaging first with the incident light is the top photo-diode;
forming one or more photo-sensitive elements within each of the photo-diodes based on electric conductivity increasing with generation of electron-hole pairs by absorption of photons with energy exceeding the band gap energy; and
connecting circuitry enabling measuring and reading out of light energy within a controlled time interval, separately from each photo-diode corresponding to separate sub-band of a color spectrum, wherein each photo-sensitive element is connected to the circuitry.
12 . The method of claim 11 , where the photo-diodes are composed as an arbitrary chemical composition of a direct band gap semiconductor.
13 . The method of claim 11 , wherein the photo-diodes are composed as Al x1 Ga x2 In x3 B x4 N y1 P y2 As y3 Sb y4 , where x1, x2, x3, x4, y1, y2, y3, y4 are molar fractions of elements such that x1+x2+x3+x4=y1+y2+y3+y4=1.
14 . The method of claim 13 , wherein the band gap of the different photo-diodes varies from approximately 1.42 eV for GaAs, corresponding to a wavelength of 870 nm, to approximately 6.2 eV for AlN, corresponding to a wavelength of 200 nm.
15 . The method of claim 11 , wherein the different photo-diodes comprise three photo-diodes corresponding to photo-sensitivity in red, green, and blue sub-bands of the color spectrum.
16 . The method of claim 15 , wherein the different photo-diodes further comprise at least one additional photo-diode corresponding to photo-sensitivity in an ultraviolet sub-band, infrared sub-band, or both infrared and ultraviolet sub-bands.
17 . The method of claim 11 , further comprising subdividing an area of the photo-diodes into specific regions corresponding to sensor pixels.
18 . The method of claim 11 , wherein each photo-diode absorbs light rays corresponding to a particular color band without color mixing.
19 . A color image sensor structure, comprising:
a layered structure having selective absorption within pre-designed light bandwidths, the layer structure comprising:
an upper layer of a first direct band gap semiconductor diode;
a middle layer of a second direct band gap semiconductor diode; and
a lower layer of a third direct band gap semiconductor diode, wherein a band gap energy of the upper layer is greater than a band gap energy of the middle layer which is greater than a band gap energy of the lower layer.
20 . The color image sensor structure of claim 19 , wherein the upper layer absorbs wavelengths of light corresponding to a blue sub-band of a visible spectrum, the middle layer absorbs wavelengths of light corresponding to a green sub-band of the visible spectrum; and the lower layer absorbs wavelengths of light corresponding to a red sub-band of the visible spectrum.